STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 6

• Manufacturer Part Number: STP2NK90Z
• Description: MOSFET N-CH 900V 2.1A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4378-5

Electrical characteristics
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Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
I
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Parameter
V
V
I
I
(see Figure 20)
I
(see Figure 20)
SD
SD
SD
DD
DD
= 2.1 A, V
= 2 A, di/dt = 100 A/µs
= 2 A, di/dt = 100 A/µs
Test condictions
= 50V
= 50V, T
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
j
GS
= 150°C
= 0
Min
Typ.
415
515
1.5
7.2
1.9
7.5
Max
2.1
8.4
1.6
Unit
µC
µC
ns
ns
A
A
V
A
A