STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 8

• Manufacturer Part Number: STP2NK90Z
• Description: MOSFET N-CH 900V 2.1A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4378-5

Electrical characteristics
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Figure 7.
Figure 9.
Figure 11. Normalized gate threshold voltage
Transconductance
Gate charge vs gate-source voltage Figure 10. Capacitance variations
vs temperature
Figure 8.
Figure 12. Normalized on resistance vs
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Static drain-source on resistance
temperature