STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 3

• Manufacturer Part Number: STP2NK90Z
• Description: MOSFET N-CH 900V 2.1A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4378-5

STP2NK90Z - STD2NK90Z - STD2NK90Z-1
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area
2.
Table 2.
Table 3.
V
Rthj-case Thermal resistance junction-case max
Rthj-amb
Symbol
Symbol
Symbol
dv/dt
ESD(G-S)
I
V
DM
P
V
V
I
E
T
I
SD
DGR
TOT
I
I
T
T
AR
GS
DS
stg
AS
D
D
j
l
(1)
≤ 2.1A, di/dt ≤ 200A/µs, V
(2)
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Drain-gate voltage (R
Gate- source Voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD(HBM-C=100pF,
R=1.5KΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
j
= 25 °C, I
Parameter
DD
≤ V
C
D
(BR)DSS
GS
Parameter
= 25°C
= I
Parameter
GS
j
= 20 kΩ)
max)
AR
= 0)
, T
, V
j
DD
C
C
≤ T
= 25°C
= 100°C
JMAX.
= 50 V)
STP2NK90Z
-55 to 150
-55 to 150
Value
2000
± 30
0.56
900
900
2.1
1.3
8.4
4.5
70
STD2NK90Z-1
STD2NK90Z
Value
Value
150
2.1
1.78
62.5
300
Electrical ratings
°C/W
°C/W
W/°C
Unit
V/ns
Unit
Unit
mJ
°C
°C
°C
W
V
V
V
A
A
A
V
A
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