STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 5

• Manufacturer Part Number: STP2NK90Z
• Description: MOSFET N-CH 900V 2.1A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6.5 Ohm @ 1.05A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 2.1A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 485pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.3 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.1 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.1A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 6.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4378-5

STP2NK90Z - STD2NK90Z - STD2NK90Z-1
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
Table 7.
C
V
Symbol
Symbol
Symbol
CASE
V
R
oss eq
(BR)DSS
g
t
t
C
I
inceases from 0 to 80% V
I
C
C
GS(th)
Q
Q
d(on)
d(off)
DS(on
DSS
GSS
fs
Q
oss
oss eq.
t
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
Voltage
Zero gate voltage
Drain current (V
Gate-body Leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Switching times
Parameter
Parameter
DS
Parameter
= 0)
DSS
GS
= 0)
I
V
V
V
V
V
D
V
V
V
V
V
V
(see Figure 22)
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
GS
= 1 mA, V
V
R
(see Figure 19)
= Max Rating
= Max Rating, T
= ± 20 V
= V
= 10 V, I
= 15 V , I
= 25 V, f = 1 MHz,
= 0
= 0 V, V
= 10 V
= 720 V, I
DD
G
Test condictions
Test condictions
Test condictions
= 4.7 Ω, V
GS
= 450 V, I
, I
GS
D
D
DS
= 50 µA
D
= 1.05 A
D
= 0
= 1.05 A
= 0 to 720 V
= 2 A,
D
GS
= 1 A,
C
= 10 V
= 125°C
Electrical characteristics
Min.
Min. Typ. Max.
Min.
900
3
Typ.
19.5
10.8
21
11
43
40
Typ.
3.75
485
2.3
3.4
50
10
24
5
oss
when V
Max.
Max. Unit
± 10
27
4.5
6.5
50
1
DS
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
µA
ns
ns
ns
ns
S
5/18
V
V
Ω