STP2NK90Z STMicroelectronics, STP2NK90Z Datasheet - Page 4

MOSFET N-CH 900V 2.1A TO-220

STP2NK90Z

Manufacturer Part Number
STP2NK90Z
Description
MOSFET N-CH 900V 2.1A TO-220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheets

Specifications of STP2NK90Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.5 Ohm @ 1.05A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
2.1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
2.3 S
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.1 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.1A
Drain Source Voltage Vds
900V
On Resistance Rds(on)
6.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4378-5

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Electrical ratings
1.1
4/18
Table 4.
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
BV
GSO
Gate-source breakdown voltage
Gate-source zener diode
Parameter
Igs=± 1mA (open drain)
STP2NK90Z - STD2NK90Z - STD2NK90Z-1
Test conditions
Min. Typ. Max. Unit
30
V

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