PH3120L,115 NXP Semiconductors, PH3120L,115 Datasheet - Page 4

• Manufacturer Part Number: PH3120L,115
• Description: MOSFET N-CH 20V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3120L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.65 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4457pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Gate Charge Qg: 48.5 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.25 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2178-2; 934057822115; PH3120L T/R

NXP Semiconductors
5. Thermal characteristics
Table 5.
PH3120L_3
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
-1
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
δ = 0.5
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
0.02
0.05
0.2
0.1
single pulse
10
-4
Rev. 03 — 30 March 2009
10
-3
Conditions
see
Figure 4
10
-2
N-channel TrenchMOS logic level FET
Min
-
10
-1
P
Typ
-
t
p
t
p
T
PH3120L
(s)
© NXP B.V. 2009. All rights reserved.
003aaa361
δ =
Max
2
T
t
p
t
1
Unit
K/W
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