PH3120L,115 NXP Semiconductors, PH3120L,115 Datasheet - Page 6

• Manufacturer Part Number: PH3120L,115
• Description: MOSFET N-CH 20V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3120L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.65 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4457pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Gate Charge Qg: 48.5 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.25 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2178-2; 934057822115; PH3120L T/R

NXP Semiconductors
PH3120L_3
Product data sheet
Fig 5.
Fig 7.
V
GS(th)
(V)
(A)
I
2.5
1.5
0.5
D
20
15
10
2
1
0
5
0
-60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
2.5
4.5
10
0.2
0
0.4
60
max
typ
min
0.6
V
GS
120
(V) = 2.1
0.8
003aaa362
T
03aa33
1.8
1.9
V
j
2
( ° C)
DS
(V)
180
Rev. 03 — 30 March 2009
1
Fig 6.
Fig 8.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
40
30
20
10
-1
-2
-3
-4
-5
-6
0
function of gate-source voltage; typical values
gate-source voltage
Transfer characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
N-channel TrenchMOS logic level FET
1
1
min
T
j
= 150 ° C
typ
2
2
25 ° C
max
PH3120L
© NXP B.V. 2009. All rights reserved.
V
V
GS
003aaa363
03aa36
GS
(V)
(V)
3
3
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