PH3120L,115 NXP Semiconductors, PH3120L,115 Datasheet - Page 7

• Manufacturer Part Number: PH3120L,115
• Description: MOSFET N-CH 20V 100A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH3120L,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.65 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 4457pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Gate Charge Qg: 48.5 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.25 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2178-2; 934057822115; PH3120L T/R

NXP Semiconductors
PH3120L_3
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(mΩ)
V
(V)
DSon
GS
40
30
20
10
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
1.9
25
2
10
50
2.1
V
GS
(V) = 2.5
20
75
4.5
Q
I
003aaa364
003aaa367
D
G
(A)
(nC)
10
100
30
Rev. 03 — 30 March 2009
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
a
10
C
10
10
1.5
0.5
4
3
2
2
1
0
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
N-channel TrenchMOS logic level FET
0
1
60
10
120
PH3120L
© NXP B.V. 2009. All rights reserved.
V
C
C
C
DS
03aa27
003aaa365
T
oss
iss
rss
j
(V)
( ° C)
180
10
2
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