FDMS3500 Fairchild Semiconductor, FDMS3500 Datasheet

MOSFET N-CH 75V 9.2A POWER56

FDMS3500

Manufacturer Part Number
FDMS3500
Description
MOSFET N-CH 75V 9.2A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS3500

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
14.5 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
9.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
91nC @ 10V
Input Capacitance (ciss) @ Vds
4765pF @ 40V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0145 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9.2 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS3500TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS3500
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: Kalabkova, Ivana
E-mail: Ivana.Kalabkova@notes.fairchildsemi.com
Phone: 408-822-2187
Implementation of change:
Expected 1st Device Shipment Date: 2009/07/13
Earliest Year/Work Week of Changed Product: 0929
Change Type Description: Assembly Process, Lead Finish Composition, Package Change (Lead
Frame), Package External Dimension
Description of Change (From): Selected MOSFET products assembled in Power 56 package, in
which the current Die Attach Pad & Leadpost plating is NiPdAu; current Gate Leadpost Plating
is NiPdAu; current Gate Interconnect is 5mil Al wire; current Singulation Method is
Saw-Singulation and current Plating Finish is NiPdAu. To view "From/To" Dimensional
Outline, please refer to the attached table "Dimensional Outline."
Description of Change (To): The alternate Die Attach Pad & Leadpost plating will be Bare Cu;
alternate Gate Leadpost Plating will be Ag; alternate Gate Interconnect will be 2mil Cu wire;
alternate Singulation Method will be Punch-singulation and the alternate Plating Finish will be
Pure Sn.
Reason for Change : In addition to the current qualified Saw-singulated Power 56 package,
Fairchild Semiconductor intends to qualify the Punch-singulated Power 56 to support volume
ramp. There will be no change to the part number as the Punch and Saw-singulated Power 56
share common land pattern dimensions and are interchangeable
Change From
Change To
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: Rivero, Douglas
E-mail: Doug.Rivero@notes.fairchildsemi.com
Phone: 1-408-822-2143
Date Issued On : 2009/04/14
Date Created : 2009/04/03
PCN# : Q2091404
Pg. 1

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FDMS3500 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

Qual/REL Plan Numbers : Q20090181 Qualification : This change will not affect the devices' specifications or functional performance. Product quality, reliability and MSL performance will be maintained. There will be no change to the part number as both the Punch ...

Page 3

... Q20090181CATMCL1 FDMS8670AS Q20090181CATMCL1 FDMS8670AS Test: (Unbiased HAST) | Conditions: 85%RH, 130C | Standard: JESD22-A118 Lot Device Q20090181AAUHAST1 FDMS8692 Q20090181BAUHAST1 FDMS8672AS Q20090181CAUHAST1 FDMS8670AS Product Id Description : Fairchild Semiconductor's selected MOSFET devices assembled in 100-HOURS 500-HOURS 1000 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 0/77 168-HOURS ...

Page 4

... Power 56 package will be affected by this change. Please refer to the Affected FSIDs section. Affected FSIDs : FDMS3500 FDMS6673BZ FDMS7670 FDMS86101 FDMS8670 FDMS8670S_SB82233 FDMS8674 FDMS8848NZ FDMS3662 FDMS6681Z FDMS7672 FDMS8660AS FDMS8670AS FDMS8672AS FDMS8680 FDMS8880 FDMS5352 FDMS7660 FDMS8460 FDMS8662 FDMS8670S FDMS8672S FDMS8692 Pg. 4 ...

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