This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss 4000 3000 C oss C iss = oss = 2000 C rss = rss 1000 0 0 Drain-Source Voltage [V] DS FDB150N10 Rev. A Figure 2. Transfer Characteristics 1000 100 10 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 500 100 20V ...
... DC Operation in This Area is Limited by R DS(on) 1 0.1 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0. FDB150N10 Rev. A (Continued) Figure 8. On-Resistance Variation 2.4 2.0 1.6 1.2 *Notes: 0 250uA D 0.4 100 150 200 o C] Figure 10. Maximum Drain Current µ µ ...
... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB150N10 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...
... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB150N10 Rev. A FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...