FDB035AN06A0 Fairchild Semiconductor, FDB035AN06A0 Datasheet

MOSFET N-CH 60V 80A TO-263AB

FDB035AN06A0

Manufacturer Part Number
FDB035AN06A0
Description
MOSFET N-CH 60V 80A TO-263AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDB035AN06A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
124nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
310W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0035 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
22 A
Power Dissipation
310000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB035AN06A0
FDB035AN06A0TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB035AN06A0
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDB035AN06A0
Quantity:
373
©2010 Fairchild Semiconductor Corporation
FDB035AN06A0
N-Channel PowerTrench
60V, 80A, 3.5m
Features
• r
• Q
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82584
MOSFET Maximum Ratings
Thermal Characteristics
R
V
V
I
E
P
T
R
R
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
DS(ON)
g
(tot) = 95nC (Typ.), V
STG
= 3.2m (Typ.), V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-263
Thermal Resistance Junction to Ambient TO-263, (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in
GATE
SOURCE
GS
GS
amb
C
= 10V
FDB SERIES
< 153
TO-263AB
= 10V, I
o
C
= 25
o
C, V
o
D
C, V
®
= 80A
GS
MOSFET
GS
(FLANGE)
Parameter
= 10V)
T
DRAIN
= 10V, with R
C
= 25°C unless otherwise noted
JA
= 43
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
2
o
C/W)
copper pad area
G
D
S
-55 to 175
Ratings
Figure 4
2.07
0.48
625
310
60
80
22
62
43
20
December 2010
FDB035AN06A0 Rev. A2
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
C
o
C

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FDB035AN06A0 Summary of contents

Page 1

... Distributed Power Architectures and VRMs • Primary Switch for 12V and 24V systems DRAIN (FLANGE 25°C unless otherwise noted C Parameter 10V 10V, with C/ copper pad area December 2010 Ratings Units Figure 4 A 625 mJ 310 -55 to 175 C o 0. C/W FDB035AN06A0 Rev. A2 ...

Page 2

... I = 80A 10V 2 80A 40A 75A, dI /dt = 100A 75A, dI /dt = 100A Tape Width Quantity 24mm 800 units Min Typ Max 150 250 100 0.0032 0.0035 - 0.0044 0.0066 - 0.0065 0.0071 - 6400 - - 1123 - - 367 - 95 124 - 30V DD = 80A - 1.0mA - 163 - 1. 1 FDB035AN06A0 Rev. A2 Units ...

Page 3

... TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION - PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDB035AN06A0 Rev. A2 175 ...

Page 4

... Resistance vs Junction Temperature o STARTING STARTING T = 150 (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED + DSS DD 0 TIME IN AVALANCHE (ms) AV Capability V = 20V 10V PULSE DURATION = DUTY CYCLE = 0.5% MAX C 0.5 1 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDB035AN06A0 Rev. A2 100 = 1.5 =80A 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( 30V WAVEFORMS IN DESCENDING ORDER 80A 40A GATE CHARGE (nC) g Gate Current FDB035AN06A0 Rev. A2 200 100 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2010 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDB035AN06A0 Rev 10V 90% ...

Page 7

... Fairchild Semiconductor Corporation , and the application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 26.51+ 19.84/(0.262+Area) EQ 26.51+ 128/(1.69+Area) EQ (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDB035AN06A0 Rev ...

Page 8

... PSPICE Electrical Model .SUBCKT FDB035AN06A0 rev July 04, 2002 1.5e 1.5e-9 Cin 6 8 6.1e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 69.3 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 4.81e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 4.63e-9 RLgate 1 9 48.1 RLdrain RLsource ...

Page 9

... SABER Electrical Model rev July 4, 2002 template FDB035AN06A0 n2,n1,n3 = m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=2.4e-11,nl=1.04,rs=1.65e-3,trs1=2.7e-3,trs2=2e-7,cjo=4.35e-9,m=5.4e-1,tt=1e-9,xti=3.9) dp..model dbreakmod = (rs=1.5e-1,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=1.7e-9,isl=10e-30,nl=10,m=0.47) m..model mmedmod = (type=_n,vto=3.3,kp=9,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=4.00,kp=275,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=2.72,kp=0.03,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-1.5) sw_vcsp ...

Page 10

... RTHERM1 TH 6 3.24e-3 RTHERM2 6 5 8.08e-3 RTHERM3 5 4 2.28e-2 RTHERM4 4 3 1e-1 RTHERM5 3 2 1.1e-1 RTHERM6 2 TL 1.4e-1 SABER Thermal Model SABER thermal model FDB035AN06A0T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =6.45e-3 ctherm.ctherm2 6 5 =3e-2 ctherm.ctherm3 5 4 =1.4e-2 ctherm.ctherm4 4 3 =1.65e-2 ctherm ...

Page 11

... TinyBoost™ TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TriFault Detect™ TRUECURRENT™* μ SerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ Definition Rev. I51 FDB035AN06A0 Rev. A2 ...

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