FQPF6N80C Fairchild Semiconductor, FQPF6N80C Datasheet

FQPF6N80C

Manufacturer Part Number

FQPF6N80C

Description

MOSFET N-CH 800V 5.5A TO-220F

Manufacturer

Fairchild Semiconductor

Series

QFET™r

Datasheet

1.FQPF6N80C.pdf (10 pages)

Specifications of FQPF6N80C

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

2.5 Ohm @ 2.75A, 10V

Drain To Source Voltage (vdss)

800V

Current - Continuous Drain (id) @ 25° C

5.5A

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

1310pF @ 25V

Power - Max

51W

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

2.5 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

5.4 S

Drain-source Breakdown Voltage

800 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

5.5 A

Power Dissipation

51000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

5.5A

Drain Source Voltage Vds

800V

On Resistance Rds(on)

2.5ohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Current page: 1 of 2
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This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: LEE, JEONGSOO

E-mail: JEONGSOO.LEE@fairchildsemi.com

Phone: 82-32-680-1311

Implementation of change:

Expected 1st Device Shipment Date: 2007/08/26

Earliest Year/Work Week of Changed Product: H35

Change Type Description: Passivation Material, Fab Process Change

Description of Change (From): There are no passivation layer.

Description of Change (To): Adding Passivation layer on front metal.

Reason for Change : To improve product quality.

Qual/REL Plan Numbers : Q20070212

All items were passed.

Qualification :

All items were passed.

Results/Discussion

Test: (Autoclave)

Lot

Q20070212AAACLV

Q20070212ABACLV

Q20070212ACACLV

Test: (High Temperature Gate Bias)

Lot

Q20070212AAHTGB

Q20070212ABHTGB

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: LEE, JEONGSOO

E-mail: JEONGSOO.LEE@fairchildsemi.com

Phone: 82-32-680-1311

Device

FQPF6N90C

Device

FQPF6N90C

500-HOURS

0/77

96-HOURS

0/77

1000-HOURS

0/77

Date Issued On : 2007/06/26

Date Created : 2007/05/17

Failure Code

PCN# : Q2072004

Pg. 1

Related parts for FQPF6N80C

FQPF6N80C Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

... FQPF3N80CYDTU FQPF5N60C FQPF6N60C FQPF6N90C FQPF8N60C FQPF8N60CYDTU FQPF8N80CXDTU FQPF9N90C Failure Code 1000-HOURS Failure Code 0/77 0/77 0/77 Failure Code FQA6N90C_F109 FQA8N80C_F109 FQA9N90C_F109 FQB5N60CTM_WS FQB8N60CTM FQD5N60CTM FQD6N60CTF FQD6N60CTM_WS FQI8N60CTU FQP4N90C FQP5N60C_NL FQP6N90C FQP8N60CTSTU FQP8N80C FQP9N90C FQPF4N90C FQPF5N60CYDTU FQPF6N80C FQPF6N90C_NL FQPF8N60CT FQPF8N60C_F105 FQPF8N80CYDTU FQU5N60CTU Pg. 2 ...

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