FDP80N06 Fairchild Semiconductor, FDP80N06 Datasheet

MOSFET N-CH 60V 80A TO-220

FDP80N06

Manufacturer Part Number
FDP80N06
Description
MOSFET N-CH 60V 80A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP80N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
74nC @ 10V
Input Capacitance (ciss) @ Vds
3190pF @ 25V
Power - Max
176W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.01 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
176000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP80N06
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2007 Fairchild Semiconductor Corporation
FDP80N06 Rev. A
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
FDP80N06
N-Channel MOSFET
60V, 80A, 10mΩ
Features
• R
• Low gate charge(Typ. 57nC)
• Low C
• Fast switching
• Improved dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 8.5mΩ ( Typ.)@ V
(Typ. 145pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
D
S
GS
= 10V, I
TO-220
D
= 40A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies,active power factor
correction, electronic lamp ballast based on half bridge topology.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 3)
(Note 1)
G
-55 to +175
Ratings
Ratings
S
D
17.6
1.17
±20
320
480
176
300
0.85
62.5
4.5
60
80
65
80
September 2007
UniFET
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDP80N06 Summary of contents

Page 1

... R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP80N06 Rev. A Description = 40A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 80A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP80N06 Rev unless otherwise noted C Package Reel Size TO-220 - Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C iss = iss C oss = rss = C gd 4500 C oss 3000 C rss 1500 0 0 Drain-Source Voltage [V] DS FDP80N06 Rev. A Figure 2. Transfer Characteristics 500 100 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 10V V = 20V GS o ...

Page 4

... Operation in This Area is Limited by R DS(on) 1 0.1 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDP80N06 Rev. A (Continued) Figure 8. On-Resistance Variation 2.5 2.0 1.5 1.0 *Notes 1mA D 0.5 100 150 200 Figure 10. Maximum Drain Current 90 µ µ ...

Page 5

... FDP80N06 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP80N06 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP80N06 Rev. A TO-220 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP80N06 Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...

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