FDI040N06 Fairchild Semiconductor, FDI040N06 Datasheet

MOSFET N-CH 60V 120A I2PAK

FDI040N06

Manufacturer Part Number
FDI040N06
Description
MOSFET N-CH 60V 120A I2PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDI040N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
133nC @ 10V
Input Capacitance (ciss) @ Vds
8235pF @ 25V
Power - Max
231W
Mounting Type
Through Hole
Package / Case
I²Pak, TO-262 (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.2 m Ohms at 10 V
Forward Transconductance Gfs (max / Min)
169 S
Drain-source Breakdown Voltage
60 V
Continuous Drain Current
118 A to 168 A
Power Dissipation
231 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDI040N06 Rev. A1
*
MOSFET Maximum Ratings
Thermal Characteristics
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
V
V
I
I
E
dv/dt
P
T
T
R
R
FDI040N06
N-Channel PowerTrench
60V, 168A, 4.0mΩ
Features
• R
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench Technology for Extremely Low
• High Power and Current Handling Capability
• RoHS Compliant
D
DM
DSS
GSS
AS
D
J
L
θJC
θJA
, T
R
Symbol
Symbol
DS(on)
DS(on)
STG
= 3.2mΩ ( Typ.) @ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
GS
D
= 10V, I
S
D
T
= 75A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted
= 25
I
FDI Series
MOSFET
2
-PAK
o
C)
C
C
C
= 25
= 100
= 25
1
o
C
General Description
This
Semiconductor’s advanced PowerTrench process that has been
especially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
o
o
C, Silicion Limited)
C, Package Limited)
o
C, Silicion Limited)
N-Channel
(Note 1)
(Note 2)
(Note 3)
G
MOSFET
D
S
is
-55 to +175
Ratings
Ratings
168*
118*
1.54
produced
±20
120
672
872
231
300
0.65
62.5
7.0
60
November 2009
www.fairchildsemi.com
using
Fairchild
Units
W/
Units
o
V/ns
mJ
o
o
C/W
W
V
V
A
A
C
C
o
C

Related parts for FDI040N06

FDI040N06 Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDI040N06 Rev. A1 ® MOSFET General Description = 75A This N-Channel D Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 75A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDI040N06 Rev. A1 Package Reel Size TO-262 Tube unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 10000 1000 *Note 1MHz ( C iss = shorted C oss = rss = C gd 100 0 Drain-Source Voltage [V] DS FDI040N06 Rev. A1 Figure 2. Transfer Characteristics 1000 100 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 1000 = 10V 100 = 20V o *Note: T ...

Page 4

... DS(on) *Notes Single Pulse 0.1 0 Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 FDI040N06 Rev. A1 (Continued) Figure 8. On-Resistance Variation *Notes 10mA D 80 120 160 200 Figure 10. Maximum Drain Current 180 µ 100 s 144 1ms 108 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FDI040N06 Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDI040N06 Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 1.27 ±0.10 2.54 TYP 10.00 FDI040N06 Rev -PAK 9.90 ±0.20 1.47 ±0.10 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 ±0.20 www.fairchildsemi.com ...

Page 8

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDI040N06 Rev. A1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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