This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Drain Current [A] D Figure 5. Capacitance Characteristics 10000 1000 *Note 1MHz ( C iss = shorted C oss = rss = C gd 100 0 Drain-Source Voltage [V] DS FDI040N06 Rev. A1 Figure 2. Transfer Characteristics 1000 100 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 1000 = 10V 100 = 20V o *Note: T ...
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDI040N06 Rev. A1 FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...