STP3N150 STMicroelectronics, STP3N150 Datasheet - Page 4

• Manufacturer Part Number: STP3N150
• Description: MOSFET N-CH 1500V 2.5A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP3N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 29.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 939pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 140000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 9ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6327-5

Electrical characteristics
2
4/15
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
case
oss eq.
V
R
(BR)DSS
g
increases from 0 to 80% V
C
I
I
C
C
Q
GS(th)
Q
DS(on
GSS
DSS
fs
Q
R
oss eq.
oss
iss
rss
gs
gd
g
g
(1)
= 25 °C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
Doc ID 13102 Rev 9
V
V
V
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
open drain
V
V
(see Figure 19)
I
V
V
V
V
D
DS
DS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
=0 to 1200 V, V
= Max rating
= Max rating, T
= 30 V, I
= 25 V, f = 1 MHz, V
= 10 V
= ± 30 V
= V
= 10 V, I
= 1200 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
= 1.3 A
= 1.3 A
D
= 0
= 2.5 A,
GS
C
=125 °C
STFW3N150, STP3N150, STW3N150
= 0
GS
= 0
1500
Min.
Min.
3
-
-
-
-
-
Typ.
Typ.
13.2
29.3
939
102
100
2.6
4.6
17
4
6
4
oss
± 100
when V
Max.
Max.
500
10
5
9
-
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
Ω
Ω
V
V
S