STP3N150 STMicroelectronics, STP3N150 Datasheet - Page 6

• Manufacturer Part Number: STP3N150
• Description: MOSFET N-CH 1500V 2.5A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STP3N150

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 9 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 1500V (1.5kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 29.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 939pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 140000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 50 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1.5kV
• On Resistance Rds(on): 9ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6327-5

Electrical characteristics
2.1
6/15
Figure 2.
Figure 4.
Figure 6.
0.01
(A)
I
0.1
10
D
1
0.1
Electrical characteristics (curves)
Safe operating area for TO-3PF
Safe operating area for TO-220
Safe operating area for TO-247
1
10
Tc=25°C
Tj=150°C
Sinlge
pulse
100
1000
V
DS
Doc ID 13102 Rev 9
100µs
10µs
1ms
10ms
AM03934v1
(V)
Figure 3.
Figure 5.
Figure 7.
10
10
10
K
-2
-1
-5
0.1
Single pulse
δ=0.5
0.2
Thermal impedance for TO-3PF
Thermal impedance for TO-220
Thermal impedance for TO-247
STFW3N150, STP3N150, STW3N150
10
0.01
-4
10
0.02
-3
0.05
10
-2
10
-1
TO3PF
t
p
(s)