FDD8586 Fairchild Semiconductor, FDD8586 Datasheet
FDD8586
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FDD8586 Summary of contents
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... Package Marking and Ordering Information Device Marking Device FDD8586 FDD8586 FDU8586 FDU8586 ©2007 Fairchild Semiconductor Corporation FDD8586/FDU8586 Rev. B ® MOSFET General Description = 35A This N-Channel MOSFET has been designed specifically D to improve the overall efficiency of DC/DC converters using = 33A either synchronous or conventional switching PWM D controllers ...
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... Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300µs, Duty cycle = 2 Starting 0.3mH 31A , FDD8586/FDU8586 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 16V ...
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... PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 120 100 175 1.0 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8586/FDU8586 Rev 25°C unless otherwise noted J 4.0 µ 4.0V 3.0 GS 2.5 2 3.5V GS 1.5 1 3.0V GS 0.5 2.5 3.0 3.5 4.0 0 Figure 2. Normalized 15 ...
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... Unclamped Inductive Switching Capability 1000 100 10 LIMITED BY PACKAGE 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED LIMITED BY r DS(on 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8586/FDU8586 Rev 25°C unless otherwise noted J 5000 1000 V = 13V DD 100 0 Figure 8. 100 125 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.005 - Figure 13. Transient Thermal Response Curve FDD8586/FDU8586 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 ...
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... FDD8586/FDU8586 Rev www.fairchildsemi.com ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD8586/FDU8586 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...