FDD8586 Fairchild Semiconductor, FDD8586 Datasheet

MOSFET N-CH 20V 35A DPAK

FDD8586

Manufacturer Part Number
FDD8586
Description
MOSFET N-CH 20V 35A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8586

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.5 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
2480pF @ 10V
Power - Max
77W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Forward Transconductance Gfs (max / Min)
175 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
77 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8586TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8586
Manufacturer:
FAIRCHILD
Quantity:
30 000
©2007 Fairchild Semiconductor Corporation
FDD8586/FDU8586 Rev. B
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD8586/FDU8586
N-Channel PowerTrench
20V, 35A, 5.5mΩ
Features
V
V
I
E
P
T
R
R
R
D
J
DS
GS
AS
D
θJC
θJA
θJA
Max r
Max r
Low gate charge: Q
Low gate resistance
100% Avalanche tested
RoHS compliant
Symbol
, T
Device Marking
STG
FDD8586
FDU8586
DS(on)
DS(on)
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
= 5.5mΩ at V
= 8.5mΩ at V
g(TOT)
GS
GS
= 34nC(Typ), V
-Continuous (Die Limited)
-Pulsed
= 10V, I
= 4.5V, I
FDD8586
FDU8586
Device
D
D
= 35A
= 33A
Parameter
GS
T
C
= 10V
= 25°C unless otherwise noted
TO-252AA
TO-251AA
Package
®
G D S
MOSFET
1
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Application
DS(on)
2
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
copper pad area
(TO-251AA)
and fast switching speed.
I-PAK
N/A(Tube)
Reel Size
(Note 2)
(Note 1)
13’’
Tape Width
-55 to 175
12mm
Ratings
N/A
G
1.94
±20
354
144
100
20
35
93
77
52
www.fairchildsemi.com
January 2007
2500 units
Quantity
D
S
75 units
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
tm

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FDD8586 Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device FDD8586 FDD8586 FDU8586 FDU8586 ©2007 Fairchild Semiconductor Corporation FDD8586/FDU8586 Rev. B ® MOSFET General Description = 35A This N-Channel MOSFET has been designed specifically D to improve the overall efficiency of DC/DC converters using = 33A either synchronous or conventional switching PWM D controllers ...

Page 2

... Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300µs, Duty cycle = 2 Starting 0.3mH 31A , FDD8586/FDU8586 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 16V ...

Page 3

... PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 120 100 175 1.0 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8586/FDU8586 Rev 25°C unless otherwise noted J 4.0 µ 4.0V 3.0 GS 2.5 2 3.5V GS 1.5 1 3.0V GS 0.5 2.5 3.0 3.5 4.0 0 Figure 2. Normalized 15 ...

Page 4

... Unclamped Inductive Switching Capability 1000 100 10 LIMITED BY PACKAGE 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED LIMITED BY r DS(on 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8586/FDU8586 Rev 25°C unless otherwise noted J 5000 1000 V = 13V DD 100 0 Figure 8. 100 125 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.005 - Figure 13. Transient Thermal Response Curve FDD8586/FDU8586 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 ...

Page 6

... FDD8586/FDU8586 Rev www.fairchildsemi.com ...

Page 7

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD8586/FDU8586 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...

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