MOSFET N-CH 20V 35A DPAK

 

FDD8586

Manufacturer Part NumberFDD8586
DescriptionMOSFET N-CH 20V 35A DPAK
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDD8586 datasheets

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FDD8586 cross reference pin-to-pin replacement

Part numberManufacturerVdsIdPackageConfigurationDatasheet
AP4434AGH-HF  AP4434AGH-HF Advanced Power Electronics Corp. 20V 25A TO-252 Single N
AP9T18GEH  AP9T18GEH Advanced Power Electronics Corp. 20V 40A TO-252 Single N AP9T18GEH.pdf
AP9T18GH  AP9T18GH Advanced Power Electronics Corp. 20V 38A TO-252 Single N AP9T18GH.pdf
AP60U02GH  AP60U02GH Advanced Power Electronics Corp. 25V 40A TO-252 Single N AP60U02GH.pdf
AP9U18GH  AP9U18GH Advanced Power Electronics Corp. 20V 37A TO-252 Single N AP9U18GH.pdf
AP9T16GH  AP9T16GH Advanced Power Electronics Corp. 20V 25A TO-252 Single N AP9T16GH.pdf
AP9916GH  AP9916GH Advanced Power Electronics Corp. 18V 35A TO-252 Single N AP9916GH.pdf
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Specifications of FDD8586

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs5.5 mOhm @ 35A, 10VDrain To Source Voltage (vdss)20V
Current - Continuous Drain (id) @ 25° C35AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs48nC @ 10VInput Capacitance (ciss) @ Vds2480pF @ 10V
Power - Max77WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.004 Ohms
Forward Transconductance Gfs (max / Min)175 SDrain-source Breakdown Voltage20 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current35 A
Power Dissipation77 WMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesFDD8586TR
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FDD8586/FDU8586
N-Channel PowerTrench
20V, 35A, 5.5mΩ
Features
Max r
= 5.5mΩ at V
= 10V, I
DS(on)
GS
Max r
= 8.5mΩ at V
= 4.5V, I
DS(on)
GS
Low gate charge: Q
= 34nC(Typ), V
g(TOT)
Low gate resistance
100% Avalanche tested
RoHS compliant
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DS
V
Gate to Source Voltage
GS
Drain Current -Continuous (Package Limited)
I
-Continuous (Die Limited)
D
-Pulsed
E
Single Pulse Avalanche Energy
AS
P
Power Dissipation
D
T
, T
Operating and Storage Temperature
J
STG
Thermal Characteristics
R
Thermal Resistance, Junction to Case TO-252,TO-251
θJC
R
Thermal Resistance, Junction to Ambient TO-252,TO-251
θJA
R
Thermal Resistance, Junction to Ambient TO-252,1in
θJA
Package Marking and Ordering Information
Device Marking
Device
FDD8586
FDD8586
FDU8586
FDU8586
©2007 Fairchild Semiconductor Corporation
FDD8586/FDU8586 Rev. B
®
MOSFET
General Description
= 35A
This N-Channel MOSFET has been designed specifically
D
to improve the overall efficiency of DC/DC converters using
= 33A
either synchronous or conventional switching PWM
D
controllers. It has been optimized for low gate charge, low
= 10V
GS
r
and fast switching speed.
DS(on)
Application
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
I-PAK
G D S
(TO-251AA)
T
= 25°C unless otherwise noted
C
Parameter
2
copper pad area
Package
Reel Size
TO-252AA
TO-251AA
N/A(Tube)
1
January 2007
D
G
S
Ratings
Units
20
±20
35
93
(Note 1)
354
(Note 2)
144
77
-55 to 175
1.94
°C/W
100
°C/W
52
°C/W
Tape Width
Quantity
13’’
12mm
2500 units
N/A
75 units
www.fairchildsemi.com
tm
V
V
A
mJ
W
°C

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FDD8586 Summary of contents

  • Page 1

    ... Package Marking and Ordering Information Device Marking Device FDD8586 FDD8586 FDU8586 FDU8586 ©2007 Fairchild Semiconductor Corporation FDD8586/FDU8586 Rev. B ® MOSFET General Description = 35A This N-Channel MOSFET has been designed specifically D to improve the overall efficiency of DC/DC converters using = 33A either synchronous or conventional switching PWM D controllers ...

  • Page 2

    ... Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300µs, Duty cycle = 2 Starting 0.3mH 31A , FDD8586/FDU8586 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 16V ...

  • Page 3

    ... PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX 120 100 175 1.0 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8586/FDU8586 Rev 25°C unless otherwise noted J 4.0 µ 4.0V 3.0 GS 2.5 2 3.5V GS 1.5 1 3.0V GS 0.5 2.5 3.0 3.5 4.0 0 Figure 2. Normalized 15 ...

  • Page 4

    ... Unclamped Inductive Switching Capability 1000 100 10 LIMITED BY PACKAGE 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED LIMITED BY r DS(on 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8586/FDU8586 Rev 25°C unless otherwise noted J 5000 1000 V = 13V DD 100 0 Figure 8. 100 125 ...

  • Page 5

    ... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.005 - Figure 13. Transient Thermal Response Curve FDD8586/FDU8586 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 ...

  • Page 6

    ... FDD8586/FDU8586 Rev www.fairchildsemi.com ...

  • Page 7

    ... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD8586/FDU8586 Rev. B OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ Stealth™ ...

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