FDMS7692 Fairchild Semiconductor, FDMS7692 Datasheet

MOSFET N-CH 30V 14A POWER56

FDMS7692

Manufacturer Part Number
FDMS7692
Description
MOSFET N-CH 30V 14A POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS7692

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
1350pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-PQFN, Power56
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDMS7692TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDMS7692
Manufacturer:
TOKO
Quantity:
642
Part Number:
FDMS7692
Manufacturer:
FSC
Quantity:
20 000
Company:
Part Number:
FDMS7692
Quantity:
100
Company:
Part Number:
FDMS7692
Quantity:
4 500
Company:
Part Number:
FDMS7692
Quantity:
24 000
Part Number:
FDMS7692A
Manufacturer:
FAIRCHILD
Quantity:
10 593
Part Number:
FDMS7692A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDMS7692 Rev.D
FDMS7692
N-Channel PowerTrench
30 V, 7.5 mΩ
Features
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS7692
DS(on)
DS(on)
= 7.5 mΩ at V
= 13 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
Power 56
= 4.5 V, I
= 10 V, I
FDMS7692
-Continuous
-Continuous (Silicon limited)
-Pulsed
Device
D
D
D
= 13 A
= 10 A
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
Power 56
DS(on)
Package
S
S
1
S
T
T
T
T
T
Pin 1
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
G
C
C
C
A
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
5
6
7
8
DS(on),
Tape Width
12 mm
fast switching speed and body
-55 to +150
Ratings
±20
2.5
4.6
30
28
47
14
50
21
27
50
www.fairchildsemi.com
4
3
2
1
3000 units
Quantity
June 2009
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

Related parts for FDMS7692

FDMS7692 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS7692 FDMS7692 ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev.D ® MOSFET General Description This N-Channel MOSFET has been designed specifically improve the overall efficiency and to minimize switch node = 10 A ringing of DC/DC converters using either synchronous or D conventional switching PWM controllers ...

Page 2

... Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ° 3. Starting 0.3 mH ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev °C unless otherwise noted J Test Conditions = 250 µ 250 µA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On Resistance vs Junction Temperature 50 µ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev °C unless otherwise noted µ 3 1.5 2 100 125 150 100 ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0.01 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev °C unless otherwise noted J 2000 1000 100 0 100 100 Figure 10. ...

Page 5

... Figure 13 di/dt = 300 TIME (ns) Figure 14. Body Diode Reverse Recovery Characteristics ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec) Junction-to-Ambient Transient Thermal Response Curve µ 100 ...

Page 6

... Dimensional Outline and Pad Layout ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev.D 6 www.fairchildsemi.com ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2009 Fairchild Semiconductor Corporation FDMS7692 Rev.D F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ ...

Related keywords