FDB52N20TM Fairchild Semiconductor, FDB52N20TM Datasheet
FDB52N20TM
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FDB52N20TM Summary of contents
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... Thermal Resistance, Junction-to-Ambient* θJA R Thermal Resistance, Junction-to-Ambient θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation FDB52N20 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transis- GS tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology ...
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... Package Marking and Ordering Information Device Marking Device FDB52N20 FDB52N20TM Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T / Coefficient J I Zero Gate Voltage Drain Current DSS I Gate-Body Leakage Current, Forward GSSF I Gate-Body Leakage Current, Reverse ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This ...
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3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V FDB52N20 ...
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Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDB52N20 Rev. A Peak Diode Recovery ...
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Mechanical Dimensions FDB52N20 Rev. A D2-PAK 7 www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...