FDB045AN08A0 Fairchild Semiconductor, FDB045AN08A0 Datasheet - Page 5

• Manufacturer Part Number: FDB045AN08A0
• Description: MOSFET N-CH 75V 90A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB045AN08A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 138nC @ 10V
• Input Capacitance (ciss) @ Vds: 6600pF @ 25V
• Power - Max: 310W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0045 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB045AN08A0TR

FDB045AN08A0 Rev. A1
Typical Characteristics
Figure 11.
10000
Figure 13.
1000
100
1.2
1.0
0.8
0.6
0.4
0.1
-80
C
V
OSS
GS
Normalized Gate Threshold Voltage vs
C
RSS
-40
= 0V, f = 1MHz
≅ C
Junction Temperature
V
Capacitance vs Drain to Source
= C
DS
DS
T
J
+ C
GD
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
0
GD
1
Voltage
40
80
V
T
GS
C
C
ISS
= V
= 25°C unless otherwise noted
10
120
= C
DS
o
GS
, I
C)
D
+ C
= 250μA
160
GD
200
75
Figure 14.
Breakdown Voltage vs Junction Temperature
10
8
6
4
2
0
0
1.15
1.10
1.05
1.00
0.95
0.90
Figure 12.
-80
V
DD
I
D
= 40V
Gate Charge Waveforms for Constant
= 250μA
-40
25
T
Normalized Drain to Source
J
, JUNCTION TEMPERATURE (
Gate Currents
Q
0
g
, GATE CHARGE (nC)
40
50
WAVEFORMS IN
DESCENDING ORDER:
80
I
I
D
D
= 80A
= 10A
120
75
o
C)
www.fairchildsemi.com
160
200
100