FQT4N20LTF Fairchild Semiconductor, FQT4N20LTF Datasheet

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FQT4N20LTF

Manufacturer Part Number
FQT4N20LTF
Description
MOSFET N-CH 200V 0.85A SOT-223
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQT4N20LTF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.35 Ohm @ 425mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
850mA
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
5.2nC @ 5V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.35 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
1.42 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.85 A
Power Dissipation
2200 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
FQT4N20L
200V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply, DC-AC converters for
uninterrupted power supply, motor control.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Ambient *
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
SOT-223
FQT Series
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 70°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 0.85A, 200V, R
• Low gate charge ( typical 4.0 nC)
• Low Crss ( typical 6.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Low level gate drive requirement allowing direct
opration from logic drivers
Typ
DS(on)
--
G
!
!
-55 to +150
FQT4N20L
= 1.35
0.018
0.85
0.68
0.85
0.22
300
200
3.4
5.5
2.2
52
! "
! "
20
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
57
QFET
GS
= 10 V
May 2001
Units
W/°C
Units
°C/W
V/ns
mJ
mJ
Rev. A, May 2001
°C
°C
W
V
A
A
A
V
A
TM

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FQT4N20LTF Summary of contents

Page 1

... Thermal Characteristics Symbol R Thermal Resistance, Junction-to-Ambient * JA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Features • 0.85A, 200V, R • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 108mH 0.85A 50V ≤ 3.8A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 ...

Page 3

... Drain Current and Gate Voltage 450 400 350 C 300 iss 250 200 C oss 150 100 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 0 10 ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 0.2 Figure 4. Body Diode Forward Voltage ...

Page 4

... Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 μ 0.5 D 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 1.0 0.8 100 100 ms 0.6 DC 0.4 ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 3.00 2.30 TYP (0.95) 4.60 6.50 ©2001 Fairchild Semiconductor Corporation SOT-223 0.10 MAX1.80 0.70 0.10 (0.95) 0.25 0.25 0.20 +0.04 0.06 –0.02 +0.10 –0.05 Rev. A, May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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