FDD8778 Fairchild Semiconductor, FDD8778 Datasheet
FDD8778
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FDD8778 Summary of contents
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... Device Marking Device FDD8778 FDD8778 FDU8778 FDU8778 FDU8778 FDU8778_F071 ©2006 Fairchild Semiconductor Corporation FDD8778/FDU8778 Rev. A ® MOSFET General Description = 35A This N-Channel MOSFET has been designed specifically D to improve the overall efficiency of DC/DC converters using = 33A either synchronous or conventional switching PWM D controllers ...
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... Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300µs, Duty cycle = 2 Starting 0.1mH 22A , FDD8778/FDU8778 Rev 25°C unless otherwise noted J Test Conditions I = 250µ 250µA, referenced to D 25° 20V ...
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... Temperature 70 PULSE DURATION = 80 µ DUTY CYCLE = 0.5%MAX 175 1.0 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8778/FDU8778 Rev 25°C unless otherwise noted J 4.0 µ 4.0V 3.0 GS 2.5 2 3.5V GS 1.5 1 0.5 2.5 3.0 3.5 0 Figure 2. Normalized 120 160 200 3 ...
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... Unclamped Inductive Switching Capability 400 100 10 LIMITED BY PACKAGE 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED LIMITED BY r DS(on 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8778/FDU8778 Rev 25°C unless otherwise noted J 2000 1000 V = 13V DD = 16V 100 0.1 Figure ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. Figure 13. Transient Thermal Response Curve FDD8778/FDU8778 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD8778/FDU8778 Rev. A ISOPLANAR™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ QFET MicroPak™ ...