FDD6630A Fairchild Semiconductor, FDD6630A Datasheet

MOSFET N-CH 30V 21A D-PAK

FDD6630A

Manufacturer Part Number
FDD6630A
Description
MOSFET N-CH 30V 21A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6630A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
35 mOhm @ 7.6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 5V
Input Capacitance (ciss) @ Vds
462pF @ 15V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
21 A
Power Dissipation
28000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6630A
FDD6630ATR

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FDD6630A
30V N-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
Applications
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
2001 Fairchild Semiconductor Corporation
D
DC/DC converter
Motor drives
D
J
DSS
GSS
, T
J C
JA
JA
Device Marking
STG
N-Channel
FDD6630A
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
G
S
MOSFET
DS( ON)
TO-252
and fast switching speed.
– Continuous
– Pulsed
has
FDD6630A
Device
Parameter
D
been
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 3)
(Note 1)
(Note 1)
Features
.
21 A, 30 V
Low gate charge (5nC typical)
Fast switching
High performance trench technology for extremely
low R
DS(ON)
Tape width
G
R
R
DS(ON)
DS(ON)
–55 to +175
16mm
Ratings
100
3.2
1.3
4.5
30
21
28
40
96
20
= 35 m @ V
= 50 m @ V
D
S
GS
GS
April 2001
= 10 V
= 4.5 V
FDD6630A Rev D(W)
2500 units
Quantity
Units
C/W
C/W
C/W
W
V
V
A
C

Related parts for FDD6630A

FDD6630A Summary of contents

Page 1

... C unless otherwise noted A (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) (Note 1b) Reel Size 13’’ April 2001 DS(ON 4.5 V DS(ON Ratings Units 100 W 28 3.2 1.3 –55 to +175 C 4.5 C/W 40 C/W 96 C/W Tape width Quantity 16mm 2500 units FDD6630A Rev D(W) ...

Page 2

... CA = 40°C/W when mounted 1in pad copper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 100 nA –100 –4 mV 125 462 pF 113 1.4 nC 2.7 A 0.8 1 96°C/W when mounted minimum pad. FDD6630A Rev. D(W) A ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 3 125 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6630A Rev. D( 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum SINGLE PULSE 0.01 0 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 FDD6630A Rev. D(W) 30 1000 2 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

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