FDD8782 Fairchild Semiconductor, FDD8782 Datasheet
FDD8782
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FDD8782 Summary of contents
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... Thermal Resistance, Junction to Ambient TO-252,1in θJA Package Marking and Ordering Information Device Marking Device FDD8782 FDD8782 FDU8782 FDU8782 FDU8782 FDU8782_F071 ©2009 Fairchild Semiconductor Corporation FDD8782/FDU8782 Rev. A1 ® MOSFET Features Max r = 11.0mΩ DS(on) Max r = 14.0mΩ DS(on) Low gate charge: Q Low gate resistance ...
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... Gate to Drain “Miller”Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300us,Duty cycle = 2 Starting 1.0mH 12A , FDD8782/FDU8782 Rev 25°C unless otherwise noted J Test Conditions I = 250μ 250μA, referenced to D 25° 20V ± ...
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... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 70 PULSE DURATION = 80 μ DUTY CYCLE = 0.5%MAX 175 1.0 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8782/FDU8782 Rev 25°C unless otherwise noted J 7 μ 3. Figure 2. Normalized 120 160 200 Figure 4. ...
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... Unclamped Inductive Switching Capability 500 100 10 LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS T = MAX RATED J AREA MAY LIMITED DS(on DRAIN TO SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8782/FDU8782 Rev 25°C unless otherwise noted J 3000 1000 100 0 Figure 125 100 25 Figure 10 ...
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... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E Figure 13. Transient Thermal Response Curve FDD8782/FDU8782 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ ...