FDD8782 Fairchild Semiconductor, FDD8782 Datasheet

MOSFET N-CH 25V 35A DPAK

FDD8782

Manufacturer Part Number
FDD8782
Description
MOSFET N-CH 25V 35A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8782

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
1220pF @ 13V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.014 Ohm @ 4.5 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8782TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8782
Manufacturer:
Fairchild Semiconductor
Quantity:
54 824
Part Number:
FDD8782
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDD8782/FDU8782 Rev. A1
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD8782/FDU8782
N-Channel PowerTrench
25V, 35A, 11mΩ
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Application
V
V
I
E
P
T
R
R
R
DS(on)
D
J
DS
GS
AS
D
θJC
θJA
θJA
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
Symbol
, T
Device Marking
STG
FDD8782
FDU8782
FDU8782
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
FDU8782_F071
-Continuous (Die Limited)
-Pulsed
FDD8782
FDU8782
Device
G D S
Parameter
T
C
= 25°C unless otherwise noted
(TO-251AA)
TO-252AA
TO-251AA
TO-251AA
Package
®
I-PAK
MOSFET
1
Features
2
Max r
Max r
Low gate charge: Q
Low gate resistance
Avalanche rated and 100% tested
RoHS Compliant
copper pad area
G
DS(on)
DS(on)
D
Short Lead I-PAK
N/A(Tube)
N/A(Tube)
Reel Size
S
(Note 2)
(Note 1)
13’’
= 11.0mΩ at V
= 14.0mΩ at V
g(10)
= 18nC(Typ), V
Tape Width
GS
GS
-55 to 175
12mm
Ratings
N/A
N/A
= 10V, I
= 4.5V, I
±20
321
100
3.0
25
35
54
72
50
52
G
November 2009
D
D
www.fairchildsemi.com
= 35A
= 35A
GS
2500 units
Quantity
75 units
75 units
= 10V
D
S
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A

Related parts for FDD8782

FDD8782 Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient TO-252,1in θJA Package Marking and Ordering Information Device Marking Device FDD8782 FDD8782 FDU8782 FDU8782 FDU8782 FDU8782_F071 ©2009 Fairchild Semiconductor Corporation FDD8782/FDU8782 Rev. A1 ® MOSFET Features Max r = 11.0mΩ DS(on) Max r = 14.0mΩ DS(on) Low gate charge: Q Low gate resistance ...

Page 2

... Gate to Drain “Miller”Charge gd Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300us,Duty cycle = 2 Starting 1.0mH 12A , FDD8782/FDU8782 Rev 25°C unless otherwise noted J Test Conditions I = 250μ 250μA, referenced to D 25° 20V ± ...

Page 3

... T , JUNCTION TEMPERATURE J Figure 3. Normalized On Resistance vs Junction Temperature 70 PULSE DURATION = 80 μ DUTY CYCLE = 0.5%MAX 175 1.0 1.5 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8782/FDU8782 Rev 25°C unless otherwise noted J 7 μ 3. Figure 2. Normalized 120 160 200 Figure 4. ...

Page 4

... Unclamped Inductive Switching Capability 500 100 10 LIMITED BY PACKAGE 1 SINGLE PULSE OPERATION IN THIS T = MAX RATED J AREA MAY LIMITED DS(on DRAIN TO SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8782/FDU8782 Rev 25°C unless otherwise noted J 3000 1000 100 0 Figure 125 100 25 Figure 10 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E Figure 13. Transient Thermal Response Curve FDD8782/FDU8782 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com ...

Page 6

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower™ FlashWriter Auto-SPM™ FPS™ Build it Now™ F-PFS™ CorePLUS™ FRFET CorePOWER™ ...

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