FQD4N25TM_WS Fairchild Semiconductor, FQD4N25TM_WS Datasheet
FQD4N25TM_WS
Manufacturer Part Number
FQD4N25TM_WS
Description
MOSFET N-CH 250V 3A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQU4N25TU.pdf
(9 pages)
Specifications of FQD4N25TM_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.75 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
5.6nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.75 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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FQD4N25TM_WS Summary of contents
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MAX0.96 2.30TYP [2.30 0.20] 0.20 0.30 (0.50) 0.76 0.10 2.30TYP [2.30 0.20] 2.30 0.10 0.50 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 0.10 ...
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MAX0.96 0.76 0.10 2.30TYP [2.30 0.20] 0.20 0.20 (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10 ...
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