FQPF10N20C Fairchild Semiconductor, FQPF10N20C Datasheet

MOSFET N-CH 200V 9.5A TO-220F

FQPF10N20C

Manufacturer Part Number
FQPF10N20C
Description
MOSFET N-CH 200V 9.5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF10N20C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
360 mOhm @ 4.75A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.36 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9.5 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF10N20C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF10N20C
Manufacturer:
Fairchi/ON
Quantity:
150 000
Part Number:
FQPF10N20C
Manufacturer:
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Part Number:
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Manufacturer:
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Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
FQP10N20C/FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 9.5A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP10N20C
FQP10N20C
0.57
1.74
62.5
DS(on)
9.5
6.0
0.5
38
72
-55 to +150
= 0.36
200
210
300
9.5
7.2
5.5
30
FQPF10N20C
FQPF10N20C
G
@V
! ! ! !
! ! ! !
9.5 *
6.0 *
3.33
62.5
38 *
0.3
38
--
QFET
GS
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
= 10 V
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Units
Units
Rev. A, March 2003
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF10N20C

FQPF10N20C Summary of contents

Page 1

... S FQP10N20C FQPF10N20C Units 200 9.5 9.5 * 6.0 6 210 mJ 9.5 7.2 mJ 5.5 V/ 0.57 0.3 W/°C -55 to +150 300 FQP10N20C FQPF10N20C Units 1.74 3.33 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, March 2003 °C °C ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 3.5mH 9.5A 50V ≤ 9.5A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 ...

Page 3

... Drain Current and Gate Voltage 1200 1000 800 C iss C oss 600 C rss 400 ※ Note ; 200 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Figure 2. Transfer Characteristics 20V GS ※ Note : ℃ ...

Page 4

... Figure 8. On-Resistance Variation 2 10 100 ※ Notes : - Figure 9-2. Maximum Safe Operating Area 100 125 150 ※ Notes : 4. - 100 150 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on) 100 100 150 Single Pulse Drain-Source Voltage [V] DS for FQPF10N20C Rev. A, March 2003 200 ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP10N20C Figure 11-2. Transient Thermal Response Curve for FQPF10N20C ©2003 Fairchild Semiconductor Corporation (Continued) ※ θ ※ ℃ θ ℃ θ θ Rev. A, March 2003 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2003 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2003 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2003 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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