FQPF5P20 Fairchild Semiconductor, FQPF5P20 Datasheet - Page 3

• Manufacturer Part Number: FQPF5P20
• Description: MOSFET P-CH 200V 3.4A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF5P20

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 2.15 S
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3.4 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
• Improved dv/dt capability
Characteristics
750
600
450
300
150
10
10
3.0
2.4
1.8
1.2
0.6
0.0
10
10
0
-1
-2
10
1
0
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
3
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
V
V
GS
GS
= - 20V
= - 10V
6
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
9
gs
gd
10
ds
1
C
+ C
+ C
1
= 25℃
gd
al
gd
(C
※ Notes :
J
1. V
2. f = 1 MHz
ds
= 25℃
= shorted)
GS
= 0 V
12
Typic
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.5
2
25℃
150℃
150℃
4
-V
-V
Q
SD
and Temperature
GS
G
1.0
4
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25℃
V
DS
V
DS
= -160V
V
DS
= -100V
= -40V
-55℃
1.5
6
6
2.0
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -40V
= 0V
2.5
10
D
= -4.8 A
Rev. A, May 2000
3.0
10
12