FQD16N25CTM_F080 Fairchild Semiconductor, FQD16N25CTM_F080 Datasheet
FQD16N25CTM_F080
Specifications of FQD16N25CTM_F080
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FQD16N25CTM_F080 Summary of contents
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... Symbol R Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Junction-to-Ambient θJA ©2009 Fairchild Semiconductor Corporation FQD16N25C Rev. A1 Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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Package Marking and Ordering Information Device Marking Device FQD16N25C FQD16N25CTM FQD16N25C FQD16N25CTF Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS ∆BV / DSS Breakdown Voltage Temperature Coefficient ∆ Zero Gate Voltage Drain Current DSS I ...
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Typical Performance Characteristics Figure 1. On-Region Characteristics V GS Top : 15.0 V 10.0 V 8 6.0 V 5.5 V 5.0 V Bottom : 4 ...
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Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Figure 9. Maximum Safe Operating Area Operation in This Area is Limited DS(on) ...
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Unclamped Inductive Switching Test Circuit & Waveforms FQD16N25C Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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FQD16N25C Rev. A1 Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) FQD16N25C Rev. A1 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 7 www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...