FQP9N30 Fairchild Semiconductor, FQP9N30 Datasheet - Page 4

• Manufacturer Part Number: FQP9N30
• Description: MOSFET N-CH 300V 9A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP9N30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 750pF @ 25V
• Power - Max: 98W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohms
• Forward Transconductance Gfs (max / Min): 4.9 S
• Drain-source Breakdown Voltage: 300 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 98 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2000 Fairchild Semiconductor International
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
, Drain-Source Voltage [V]
0
※ Notes :
1 0
1 0
Operation in This Area
is Limited by R
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
- 2
1 0
0
C
J
= 150
= 25
- 5
0 .0 1
o
D = 0 . 5
0 .0 2
0 .0 5
C
o
0 .1
C
0 .2
50
DS(on)
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
- 4
1 ms
C]
s in g le p u ls e
10
※ Notes :
1. V
2. I
t
2
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
= 0 V
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
8
6
4
2
0
-100
25
Figure 8. On-Resistance Variation
※ N o te s :
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t ) = 1 . 2 8 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
75
1
/t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 4.5 A
= 10 V
200
150
Rev. A, May 2000