FDD8874 Fairchild Semiconductor, FDD8874 Datasheet - Page 4

MOSFET N-CH 30V 116A D-PAK

FDD8874

Manufacturer Part Number
FDD8874
Description
MOSFET N-CH 30V 116A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8874

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.1 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
116A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
2990pF @ 15V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0051 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
116 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8874
Manufacturer:
Fairchild Semiconductor
Quantity:
1 855
Part Number:
FDD8874
Manufacturer:
FAIRCHILD
Quantity:
3 745
Part Number:
FDD8874
Manufacturer:
FAI
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9. Drain to Source On Resistance vs Gate
Figure 5. Forward Bias Safe Operating Area
100
1000
80
60
40
20
100
0.1
0
10
14
12
10
1.5
1
8
6
4
1
2
Figure 7. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
T
DD
SINGLE PULSE
T
T
I
J
D
OPERATION IN THIS
J
C
LIMITED BY r
= 175
= 1A
= MAX RATED
= 15V
= 25
Voltage and Drain Current
AREA MAY BE
I
o
o
D
C
C
V
V
= 35A
GS
V
T
DS
2.0
GS
J
, GATE TO SOURCE VOLTAGE (V)
, DRAIN TO SOURCE VOLTAGE (V)
= 25
4
, GATE TO SOURCE VOLTAGE (V)
DS(ON)
o
C
2.5
6
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
T
J
C
= -55
= 25°C unless otherwise noted
o
3.0
C
8
10ms
10 s
100 s
1ms
DC
3.5
60
10
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
100
Figure 10. Normalized Drain to Source On
Figure 6. Unclamped Inductive Switching
500
100
80
60
40
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
1
0.1
Resistance vs Junction Temperature
0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R
t
AV
AV
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
= (L)(I
= (L/R)ln[(I
V
0
-40
GS
STARTING T
AS
V
= 5V
DS
)/(1.3*RATED BV
T
0.2
J
t
, DRAIN TO SOURCE VOLTAGE (V)
AS
AV
, JUNCTION TEMPERATURE (
V
, TIME IN AVALANCHE (ms)
0
*R)/(1.3*RATED BV
GS
Capability
1
= 10V
J
= 150
V
40
GS
0.4
DSS
= 2.5V
o
C
- V
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 s
80
STARTING T
DD
DSS
)
10
V
- V
GS
V
120
GS
DD
0.6
= 10V, I
o
FDD8874 / FDU8874 Rev.B2
) +1]
= 4V
C)
J
T
= 25
V
C
160
GS
D
= 25
= 35A
o
= 3V
C
o
C
100
200
0.8

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