FDP8896 Fairchild Semiconductor, FDP8896 Datasheet

MOSFET N-CH 30V 92A TO-220AB

FDP8896

Manufacturer Part Number
FDP8896
Description
MOSFET N-CH 30V 92A TO-220AB
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP8896

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
92A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
67nC @ 10V
Input Capacitance (ciss) @ Vds
2525pF @ 15V
Power - Max
80W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0059 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
80000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDP8896
N-Channel PowerTrench
30V, 92A, 5.9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
Device Marking
(FLANGE)
STG
DRAIN
FDP8896
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-220
Thermal Resistance Junction to Ambient TO-220 ( Note 3)
FDP SERIES
TO-220AB
amb
C
C
= 25
= 25
o
C
FDP8896
= 25
Device
o
o
C, V
C, V
o
C, V
®
GS
GS
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
GATE
Parameter
T
= 10V, with R
DRAIN
C
SOURCE
= 25°C unless otherwise noted
TO-220AB
Package
JA
= 62
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
r
RoHS Compliant
DS(ON)
DS(ON)
DS(ON)
o
C/W)
Reel Size
Tube
= 5.9m , V
= 7.0m , V
G
GS
GS
= 10V, I
= 4.5V, I
D
Tape Width
S
N/A
-55 to 175
Ratings
Figure 4
D
D
0.53
1.88
= 35A
= 35A
30
92
85
16
74
80
62
20
N
May 2008
Quantity
50 units
FDP8896 Rev. A2
Units
W/
o
o
C/W
C/W
tmM
mJ
o
W
V
A
V
A
A
A
C
o
C

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FDP8896 Summary of contents

Page 1

... DRAIN GATE T = 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/ Package Reel Size TO-220AB Tube N May 2008 tmM = 10V 35A 4.5V 35A Ratings Units Figure 0. -55 to 175 C o 1.88 C C/W Tape Width Quantity N/A 50 units FDP8896 Rev. A2 ...

Page 2

... 35A 20A 35A, dI /dt = 100A 35A, dI /dt = 100A 27V 10V. GS Min Typ Max 150 250 100 1.2 - 2.5 - 0.0050 0.0059 - 0.0060 0.0070 - 0.0078 0.0094 - 2525 - - 490 - - 300 - - 2 15V DD - 2.3 3.0 = 35A - 1.0mA - 5 9 168 - 103 - - 150 - - 1. 1 Units FDP8896 Rev. A2 ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP8896 Rev. A2 175 ...

Page 4

... AS DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability V = 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.25 0.5 0.75 1.0 1. DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( 100 1.5 = 35A 200 FDP8896 Rev. A2 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A 16A GATE CHARGE (nC) g Gate Current 200 50 FDP8896 Rev. A2 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDP8896 Rev 10V 90% ...

Page 7

... PSPICE Electrical Model .SUBCKT FDP8896 rev November 2003 2.3e 2.3e-9 Cin 6 8 2.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.5e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2.7e-9 RLgate RLdrain RLsource ...

Page 8

... SABER Electrical Model rev November 2003 template FDP8896 n2,n1,n3 =m_temp electrical n2,n1,n3 number m_temp=25 { var i iscl dp..model dbodymod = (isl=4e-12,ikf=10,nl=1.01,rs=2.6e-3,trs1=8e-4,trs2=2e-7,cjo=8.8e-10,m=0.57,tt=1e-16,xti=2.2) dp..model dbreakmod = (rs=8e-2,trs1=1e-3,trs2=-8.9e-6) dp..model dplcapmod = (cjo=9.4e-10,isl=10e-30,nl=10,m=0.4) m..model mmedmod = (type=_n,vto=1.98,kp=10,is=1e-30, tox=1) m..model mstrongmod = (type=_n,vto=2.4,kp=350,is=1e-30, tox=1) m..model mweakmod = (type=_n,vto=1.68,kp=0.05,is=1e-30, tox=1,rs=0.1) sw_vcsp..model s1amod = (ron=1e-5,roff=0.1,von=-4,voff=-3) sw_vcsp ...

Page 9

... RTHERM1 TH 6 3.0e-2 RTHERM2 6 5 1.0e-1 RTHERM3 5 4 1.8e-1 RTHERM4 4 3 2.8e-1 RTHERM5 3 2 4.5e-1 RTHERM6 2 TL 4.6e-1 SABER Thermal Model SABER thermal model FDP8896T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =9e-4 ctherm.ctherm2 6 5 =1e-3 ctherm.ctherm3 5 4 =2e-3 ctherm.ctherm4 4 3 =3e-3 ctherm ...

Page 10

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDP8896 Rev.A2 ® Rev. I34 ...

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