IRL640A Fairchild Semiconductor, IRL640A Datasheet
IRL640A
Specifications of IRL640A
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IRL640A Summary of contents
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... T L Purposes, 1/8 Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation = 200V DS = =100 C) C (1) (2) (1) (1) (3) = from case for 5-seconds Typ. -- 0.5 -- IRL640A BV = 200 V DSS R = 0.18 DS(on TO-220 1.Gate 2. Drain 3. Source Value Units V 200 V/ns 5 ...
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... IRL640A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...
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... Fig 3. On-Resistance vs. Drain Current Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss iss rss oss @ rss Drain-Source Voltage [V] DS Fig 2. Transfer Characteristics Gate-Source Voltage [V] GS Fig 4. Source-Drain Diode Forward Voltage Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage Total Gate Charge [nC] G IRL640A @ ...
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... IRL640A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [ D=0.5 0.2 0 0.05 0.02 0.01 single pulse - Square Wave Pulse Duration 1 Fig 8. On-Resistance vs. Temperature Fig 10. Max. Drain Current vs. Case Temperature Fig 11. Thermal Response @ Notes : 1. Z (t)=1. ...
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... Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 5V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Vary t to obtain required peak DUT Same Type as DUT DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRL640A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time ...
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... IRL640A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I Driver Driver ) DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current di/ Body Diode Reverse Current Body Diode Recovery dv/dt ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...