FQAF44N08 Fairchild Semiconductor, FQAF44N08 Datasheet

MOSFET N-CH 80V 35.6A TO-3PF

FQAF44N08

Manufacturer Part Number
FQAF44N08
Description
MOSFET N-CH 80V 35.6A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQAF44N08

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
34 mOhm @ 17.8A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
35.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1430pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.034 Ohms
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
35.6 A
Power Dissipation
83 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQAF44N08
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2000 Fairchild Semiconductor International
FQAF44N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, high
efficiency switching for DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQAF Series
C
C
= 25°C unless otherwise noted
TO-3PF
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 35.6A, 80V, R
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
DS(on)
Typ
--
--
G
FQAF44N08
!
!
-55 to +175
= 0.034
142.4
35.6
25.2
35.6
0.56
450
300
8.3
6.5
80
83
! "
! "
25
!
!
!
!
S
D
"
"
"
"
"
"
@V
Max
1.8
40
QFET
QFET
QFET
QFET
GS
= 10 V
August 2000
Rev. A, August 2000
Units
W/°C
Units
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQAF44N08 Summary of contents

Page 1

... C Parameter August 2000 QFET QFET QFET QFET = 0.034 @ DS(on " " ! " ! " " " " " FQAF44N08 Units 80 V 35.6 A 25.2 A 142 450 mJ 35.6 A 8.3 mJ 6.5 V/ 0.56 W/°C -55 to +175 °C 300 °C Typ Max Units -- 1.8 ° ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 0.49mH 35.6A 25V ≤ 44A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3000 2500 2000 1500 1000 500 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 175℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 2 10 ...

Page 4

... 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 40 30 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 2.00 0.20 2.00 0.20 4.00 0.20 +0.20 0.75 –0.10 5.45TYP [5.45 ] 0.30 ©2000 Fairchild Semiconductor International TO-3PF 15.50 ø3.60 0.20 0.20 2.00 0.20 5.45TYP [5.45 ] 0.30 5.50 0.20 3.00 0.20 (1.50) 0.85 0.03 2.00 0.20 3.30 0.20 +0.20 0.90 – ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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