FDB12N50TM Fairchild Semiconductor, FDB12N50TM Datasheet

MOSFET N-CH 500V 11.5A D2PAK

FDB12N50TM

Manufacturer Part Number
FDB12N50TM
Description
MOSFET N-CH 500V 11.5A D2PAK
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDB12N50TM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
1315pF @ 25V
Power - Max
165W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
11.5 A
Power Dissipation
165000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB12N50TMTR

Available stocks

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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDB12N50TM
Quantity:
78 400
©2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. A1
FDB12N50TM
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
• R
• Low gate charge ( Typ. 22nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
MOSFET Maximum Ratings
Thermal Characteristics
*When mounted on the minimum pad size recommended (PCB Mount)
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θJA
θJA
, T
DS(on)
Symbol
Symbol
*
STG
rss
= 0.55Ω ( Typ.)@ V
G
( Typ. 12pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Ambient
S
D
FDB Series
2
-PAK
GS
D
= 10V, I
D
= 6A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
G
C
o
C unless otherwise noted
= 25
D
S
o
C)
C
C
1
= 25
= 100
o
C
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
o
C)
o
C)
I
FDI Series
2
-PAK
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
-55 to +150
Ratings
Ratings
16.7
11.5
11.5
1.33
500
±30
456
165
300
0.75
62.5
6.9
4.5
S
46
D
40
UniFET
June 2007
www.fairchildsemi.com
switching
Units
W/
Units
o
V/ns
mJ
mJ
C/W
o
o
W
V
V
A
A
A
C
C
o
TM
C
tm

Related parts for FDB12N50TM

FDB12N50TM Summary of contents

Page 1

... Thermal Resistance, Junction to Ambient* θJA R Thermal Resistance, Junction to Ambient θJA *When mounted on the minimum pad size recommended (PCB Mount) ©2007 Fairchild Semiconductor Corporation FDB12N50TM Rev. A1 Description = 6A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. ...

Page 2

... R = 25Ω, Starting ≤ 11.5A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDB12N50TM Rev unless otherwise noted C Package Reel Size 2 D -PAK 330mm 2 I -PAK ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 2000 C iss = oss C oss = rss = C gd 1500 C iss 1000 C rss 500 0 0 Drain-Source Voltage [V] DS FDB12N50TM Rev. A1 Figure 2. Transfer Characteristics *Notes: 1. 250 μ s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 10 = 10V V = 20V GS o *Note: T ...

Page 4

... Limited by R DS(on) *Notes: 0 Single Pulse 0. Drain-Source Voltage [ 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 1E FDB12N50TM Rev. A1 (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 250 μ 0.0 100 150 200 Figure 10. Maximum Drain Current 14 20 μ ...

Page 5

... FDB12N50TM Rev. A1 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

...

Page 7

... Mechanical Dimensions 9.90 1.27 ±0.10 2.54 TYP 10.00 FDB12N50TM Rev -PAK ±0.20 0.80 ±0.10 2.54 TYP ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 0.10 ±0.15 2.40 ±0.20 +0.10 0.50 –0.05 10.00 ±0.20 (8.00) (4.40) (2XR0.45) 0.80 ±0.10 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 1.27 ±0.10 2.54 TYP 10.00 FDB12N50TM Rev -PAK 9.90 ±0.20 1.47 ±0.10 0.80 ±0.10 2.54 TYP ±0.20 8 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDB12N50TM Rev. A1 i-Lo™ Power-SPM™ ImpliedDisconnect™ PowerTrench IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...

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