FQPF45N15V2 Fairchild Semiconductor, FQPF45N15V2 Datasheet

MOSFET N-CH 150V 45A TO-TO-220F

FQPF45N15V2

Manufacturer Part Number
FQPF45N15V2
Description
MOSFET N-CH 150V 45A TO-TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF45N15V2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 22.5A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
3030pF @ 25V
Power - Max
66W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
66 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF45N15V2
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2004 Fairchild Semiconductor Corporation
FQP45N15V2/FQPF45N15V2
150V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for DC to DC converters, sychronous rectification,
and other applications lowest Rds(on) is required.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 45A, 150V, R
• Low gate charge ( typical 72 nC)
• Low Crss ( typical 135 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF
FQP45N15V2
FQP45N15V2
DS(on)
1.47
0.68
62.5
180
220
0.5
45
31
-55 to +150
= 0.04
1124
150
300
4.5
45
22
30
FQPF45N15V2
FQPF45N15V2
G
@V
! ! ! !
! ! ! !
180 *
0.44
45 *
31 *
2.25
62.5
GS
QFET
66
--
= 10 V
◀ ◀ ◀ ◀
◀ ◀ ◀ ◀
! ! ! !
! ! ! !
! ! ! !
! ! ! !
D
S
● ●
● ●
● ●
● ●
● ●
● ●
▲ ▲ ▲ ▲
▲ ▲ ▲ ▲
Rev. A, October 2004
Units
Units
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

Related parts for FQPF45N15V2

FQPF45N15V2 Summary of contents

Page 1

... S FQP45N15V2 FQPF45N15V2 Units 150 180 180 * 30 1124 45 22 4.5 220 66 1.47 0.44 W/°C -55 to +150 300 FQP45N15V2 FQPF45N15V2 Units 0.68 2.25 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, October 2004 ® V/ns W °C °C ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 0.74mH 45A 50V 45A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 150 120 150° ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 6000 5000 4000 C iss 3000 C oss 2000 C rss 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation Notes : ※ 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 10V ...

Page 4

... Figure 9-2. Maximum Safe Operating Area 125 150 175 ℃ Notes : ※ 22 - 100 150 200 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on 100 100 ms DC Notes : ※ 175 Single Pulse Drain-Source Voltage [V] DS for FQPF45N15V2 Rev. A, October 2004 ...

Page 5

... Typical Characteristics Figure 11. Transient Thermal Response Curve for FQP45N15V2 Figure 11-2. Transient Thermal Response Curve for FQPF45N15V2 ©2004 Fairchild Semiconductor Corporation (Continued) ※ tio ※ tio ℃ θ θ ( ℃ θ ( θ Rev. A, October 2004 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions ©2004 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. A, October 2004 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, October 2004 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® A CEx™ FAST FASTr™ ActiveArray™ Bottomless™ FPS™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ ...

Related keywords