FDPF7N50U Fairchild Semiconductor, FDPF7N50U Datasheet

MOSFET N-CH 500V 5A TO-220F

FDPF7N50U

Manufacturer Part Number
FDPF7N50U
Description
MOSFET N-CH 500V 5A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF7N50U

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
16.6nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 25V
Power - Max
39W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.5 Ohms
Forward Transconductance Gfs (max / Min)
2.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5 A
Power Dissipation
31.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
FDP7N50U/FDPF7N50U REV. B
FDP7N50U
500V N-Channel MOSFET
Features
• 5A, 500V, R
• Low gate charge ( typical 12.8 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature.
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 9 pF)
DS(on)
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
D
= 1.5Ω @V
S
/FDPF7N50U
GS
TO-220
FDP Series
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
G
www.DataSheet4U.com
D
S
1
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
cient switched mode power supplies and active power factor
correction.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
TO-220F
FDPF Series
FDP7N50U FDPF7N50U
FDP7N50U
0.71
62.5
3.0
20
89
1.4
0.5
5
-55 to +150
500
±30
270
300
8.9
4.5
5
G
FDPF7N50U
3.0 *
0.31
20 *
62.5
5 *
39
3.2
--
UniFET
D
S
March 2007
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FDPF7N50U

FDPF7N50U Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP7N50U/FDPF7N50U REV. B Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 7A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP7N50U/FDPF7N50U REV. B Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Conditions 250µ ...

Page 3

... V = 10V GS 1.5 1.0 0.5 0 Drain Current [A] D Figure 5. Capacitance Characteristics 1000 C iss C oss 100 C rss Drain-Source Voltage [V] DS FDP7N50U/FDPF7N50U REV. B Figure 2. Transfer Characteristics Notes : ※ 250µ s Pulse Test ℃ Figure 4. Body Diode Forward Voltage 20V 10 GS ※ Note : ℃ ...

Page 4

... T , Junction Temperature [ J Figure 9-1. Maximum Safe Operating Area - FDP7N50U Operation in This Area is Limited by R DS(on Drain-Source Voltage [V] DS FDP7N50U/FDPF7N50U REV. B (Continued) Figure 8. Maximum Drain Current ♦ Notes : 250 µ 100 150 200 Figure 9-2. Maximum Safe Operating Area 100 us ...

Page 5

... Figure 10-1. Transient Thermal Response Curve - FDP7N50U Figure 10-2. Transient Thermal Response Curve - FDPF7N50U FDP7N50U/FDPF7N50U REV ※ tio ※ tio ( ℃ θ ( θ ( ℃ θ ( θ www.fairchildsemi.com ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP7N50U/FDPF7N50U REV. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP7N50U/FDPF7N50U REV. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP7N50U/FDPF7N50U REV. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 ±0.10 0.80 ±0.10 0.35 2.54TYP ±0.20 [2.54 ] FDP7N50U/FDPF7N50U REV. B (Continued) TO-220F ±0.20 ±0.10 10.16 ø3.18 (7.00) (1.00x45°) #1 2.54TYP ±0.20 [2.54 ] ±0.20 9.40 9 ±0.20 2.54 (0.70) +0.10 0.50 ±0.20 2.76 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ ...

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