FDP8447L Fairchild Semiconductor, FDP8447L Datasheet - Page 3

• Manufacturer Part Number: FDP8447L
• Description: MOSFET N-CH 40V 12A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8447L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 20V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0087 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
Typical Characteristics
100
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Figure 3. Normalized On- Resistance
80
60
40
20
80
60
40
20
Figure 1.
-50
0
0
0
1
Figure 5. Transfer Characteristics
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
V
I
DS
D
-25
GS
vs Junction Temperature
= 14A
= 5V
= 10V
V
T
V
On-Region Characteristics
J
DS
GS
1
0
,
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
V
V
V
2
GS
GS
GS
25
= 10V
= 4.5V
= 4V
T
J
= 125
µ
50
T
s
2
J
= 25
o
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
T
C
J
o
75
= 25°C unless otherwise noted
C
3
100
3
T
o
J
C )
V
V
= -55
GS
GS
125
= 3.5V
= 3V
o
C
µ
s
150
4
4
3
0.001
0.01
100
0.1
3.0
2.5
2.0
1.5
1.0
0.5
10
20
16
12
1
8
4
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
2
vs Drain Current and Gate Voltage
Figure 6.
V
V
GS
GS
V
0.2
SD
= 3V
= 0V
V
GS
20
, BODY DIODE FORWARD VOLTAGE (V)
V
Normalized On-Resistance
T
On-Resistance vs Gate to
GS
,
J
Source Voltage
I
4
GATE TO SOURCE VOLTAGE
I
= 125
Source to Drain Diode
D
D
= 3.5V
,
= 7A
DRAIN CURRENT(A)
0.4
o
C
40
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
GS
T
T
0.6
J
J
6
PULSE DURATION = 80
DUTY CYCLE = 0.5%MAX
V
= 4V
= 25
= 125
GS
= 4.5V
60
o
C
o
C
0.8
T
J
= -55
8
T
(
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V
V
80
J
o
GS
)
1.0
= 25
C
µ
= 10V
s
o
C
µ
s
100
1.2
10