FDP12N50 Fairchild Semiconductor, FDP12N50 Datasheet - Page 9

• Manufacturer Part Number: FDP12N50
• Description: MOSFET N-CH 500V 11.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP12N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 1315pF @ 25V
• Power - Max: 165W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.55 Ohms
• Forward Transconductance Gfs (max / Min): 11.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6.9 A
• Power Dissipation: 165 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP12N50 / FDPF12N50 Rev. A
Mechanical Dimensions
[2.54
2.54TYP
MAX1.47
0.80
0.35
±0.20
±0.10
±0.10
]
10.16
9.40
#1
(7.00)
±0.20
±0.20
[2.54
2.54TYP
TO-220F
±0.20
ø3.18
]
9
±0.10
(1.00x45°)
0.50
+0.10
–0.05
2.54
2.76
(0.70)
±0.20
±0.20
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