FDP33N25 Fairchild Semiconductor, FDP33N25 Datasheet

MOSFET N-CH 250V 33A TO-220

FDP33N25

Manufacturer Part Number
FDP33N25
Description
MOSFET N-CH 250V 33A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP33N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
94 mOhm @ 16.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
2135pF @ 25V
Power - Max
235W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.094 Ohms
Forward Transconductance Gfs (max / Min)
26.6 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
33 A
Power Dissipation
235 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Price
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Manufacturer:
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©2007 Fairchild Semiconductor Corporation
FDP33N25 / FDPF33N25T Rev. B
FDP33N25 / FDPF33N25T
250V N-Channel MOSFET
Features
• 33A, 250V, R
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
G
D
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.094Ω @V
TO-220
FDP Series
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
C
= 25°C)
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP33N25
FDP33N25 FDPF33N25T
20.4
1.89
132
235
33
0.53
62.5
0.5
-55 to +150
± 30
23.5
250
918
300
4.5
33
FDPF33N25T
G
20.4*
132*
0.29
33*
37
62.5
3.4
--
UniFET
S
D
October
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDP33N25 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP33N25 / FDPF33N25T Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 33A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP33N25 / FDPF33N25T Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250µ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 4000 3000 C oss C iss 2000 1000 C rss Drain-Source Voltage [V] DS FDP33N25 / FDPF33N25T Rev. B Figure 2. Transfer Characteristics Notes : µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10V 1 10 ...

Page 4

... Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature Case Temperature [ C FDP33N25 / FDPF33N25T Rev. B (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : µ 250 A 0.5 D 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area µ ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP33N25 Figure 11-2. Transient Thermal Response Curve for FDPF33N25T FDP33N25 / FDPF33N25T Rev. B (Continued) D=0.5 0.2 0 0.05 0.02 * Notes : 0. θ JC single pulse 2. Duty Factor, D Square Wave Pulse Duration [sec] 1 D=0.5 0.2 0.1 ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP33N25 / FDPF33N25T Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms FDP33N25 / FDPF33N25T Rev www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP33N25 / FDPF33N25T Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP33N25 / FDPF33N25T Rev. B TO-220F Potted 9 Dimensions in Millimeters Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP33N25 / FDPF33N25T Rev. B FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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