FQA70N10 Fairchild Semiconductor, FQA70N10 Datasheet

MOSFET N-CH 100V 70A TO-3P

FQA70N10

Manufacturer Part Number
FQA70N10
Description
MOSFET N-CH 100V 70A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA70N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
70A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
214W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.023 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
48 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
70 A
Power Dissipation
214000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
70A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
23mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2000 Fairchild Semiconductor International
FQA70N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as audio amplifier,
high efficiency switching DC/DC converters, and DC motor
control.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
CS
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
FQA Series
C
C
= 25°C unless otherwise noted
TO-3PN
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 70A, 100V, R
• Low gate charge ( typical 85 nC)
• Low Crss ( typical 150 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
!
!
DS(on)
0.24
Typ
--
--
! "
! "
FQA70N10
-55 to +175
= 0.023
!
!
!
!
S
D
"
"
"
"
"
"
1300
49.5
21.4
1.43
280
214
300
100
6.0
70
70
25
@V
Max
0.7
40
--
GS
QFET
QFET
QFET
QFET
= 10 V
August 2000
Rev. B, August 2000
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQA70N10 Summary of contents

Page 1

... C Parameter August 2000 QFET QFET QFET QFET = 0.023 @ DS(on " " ! " ! " " " " " FQA70N10 Units 100 70 49.5 280 25 1300 mJ 70 21.4 mJ 6.0 V/ns 214 1.43 W/°C -55 to +175 300 Typ Max Units -- 0.7 °C/W 0.24 -- °C ° ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 0.4mH 70A 25V ≤ 70A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2000 Fairchild Semiconductor International T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 100 ...

Page 3

... Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 7000 6000 5000 C iss 4000 C oss 3000 2000 C rss 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2000 Fairchild Semiconductor International 175℃ 10 25℃ ※ Notes : 1. 250μ s Pulse Test 25℃ Figure 2. Transfer Characteristics 10V ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2000 Fairchild Semiconductor International (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2000 Fairchild Semiconductor International Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2000 Fairchild Semiconductor International + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2000 Fairchild Semiconductor International TO-3PN Dimensions in Millimeters Rev. B, August 2000 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...

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