FQA32N20C Fairchild Semiconductor, FQA32N20C Datasheet

MOSFET N-CH 200V 32A TO-3P

FQA32N20C

Manufacturer Part Number
FQA32N20C
Description
MOSFET N-CH 200V 32A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA32N20C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
32A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2220pF @ 25V
Power - Max
204W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.082 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
32 A
Power Dissipation
204000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA32N20C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQA32N20C
Manufacturer:
FSC
Quantity:
86 755
Part Number:
FQA32N20C
Manufacturer:
ST
0
©2004 Fairchild Semiconductor Corporation
FQA32N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters and
switch mode power supplies.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
, T
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
TO-3PN
FQA Series
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 32A, 200V, R
• Low gate charge ( typical 82.5 nC)
• Low Crss ( typical 185 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
DS(on)
0.24
Typ
--
--
FQA32N20C
-55 to +150
= 0.082Ω @V
D
S
20.4
20.4
1.63
± 30
200
128
955
204
300
5.5
32
32
Max
0.61
40
--
QFET
GS
= 10 V
Units
W/°C
Units
Rev. A, March 2004
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQA32N20C Summary of contents

Page 1

... C Parameter QFET = 0.082Ω DS(on ● ● ◀ ◀ ▲ ▲ G ● ● ● ● S FQA32N20C Units 200 32 20.4 128 ± 30 955 mJ 32 20.4 mJ 5.5 V/ns 204 1.63 W/°C -55 to +150 °C 300 Typ Max Units -- 0.61 ° ...

Page 2

... G ≤ 32A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 6000 5000 4000 C iss 3000 C oss C 2000 rss ※ Notes : 1000 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation ※ Notes : 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ ...

Page 4

... 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 0 250 µA D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 40 30 100 µ Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2004 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters Rev. A, March 2004 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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