FDP5800 Fairchild Semiconductor, FDP5800 Datasheet - Page 3

• Manufacturer Part Number: FDP5800
• Description: MOSFET N-CH 60V 14A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP5800

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 9160pF @ 15V
• Power - Max: 242W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 242000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP5800 Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
10000
9000
7500
6000
4500
3000
1500
400
100
100
5.5
5.0
4.5
4.0
10
5
0.03
10
0
-1
* Notes :
1. 250
2. T
Drain Current and Gate Voltage
C
C
C
V
= 25
µ
40
C
oss
rss
DS
s Pulse Test
V
iss
0.1
DS
, Drain-Source Voltage [V]
o
C
,Drain-Source Voltage[V]
I
D
, Drain Current [A]
V
GS
10
80
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
= 10V
0
120
* Note : T
Bottom : 3.0 V
Top :
(
C ds = shorted
* Note:
1
V
160
GS
1. V
2. f = 1MHz
10
J
10.0 V
V
= 25
1
= 20V
GS
5.0 V
4.5 V
4.0 V
3.5 V
GS
= 0V
o
C
)
200
3
30
3
Figure 2. Transfer Characteristics
1000
Figure 4. Body Diode Forward Voltage
1000
Figure 6. Gate Charge Characteristics
100
100
0.1
10
10
10
1
1
8
6
4
2
0
0.2
1
0
V
V
DS
GS
150
= 6V
= 0V
V
0.4
20
SD
Variation vs. Source Current
and Temperatue
o
C
, Body Diode Forward Voltage [V]
V
Q
2
GS
g
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
V
V
V
0.6
40
DS
DS
DS
150
= 25V
= 35V
= 50V
o
C
0.8
60
3
25
-55
* Note : I
o
1.0
80
C
o
C
25
o
C
4
D
100
1.2
= 80A
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120
1.4
5