FCPF7N60NT Fairchild Semiconductor, FCPF7N60NT Datasheet

MOSFET N-CH 600V 6.8A TO-220F

FCPF7N60NT

Manufacturer Part Number
FCPF7N60NT
Description
MOSFET N-CH 600V 6.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
SupreMOS™r
Datasheet

Specifications of FCPF7N60NT

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
520 mOhm @ 3.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35.6nC @ 10V
Input Capacitance (ciss) @ Vds
960pF @ 100V
Power - Max
30.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.46 Ohms
Forward Transconductance Gfs (max / Min)
8.5 S
Drain-source Breakdown Voltage
600 V
Continuous Drain Current
4.3 A to 6.8 A
Power Dissipation
30.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
17.8 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FCP7N60N / FCPF7N60NT Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
FCP7N60N / FCPF7N60NT
N-Channel MOSFET
600V, 6.8A, 0.52Ω
Features
• R
• Ultra Low Gate Charge ( Typ.Qg = 17.8nC)
• Low Effective Output Capacitance
• 100% Avalanche Tested
• RoHS Compliant
, T
Symbol
Symbol
STG
DS(on)
G D S
= 0.46Ω ( Typ.) @ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt Ruggedness
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Heak Sink ( Typical)
Thermal Resistance, Junction to Ambient
TO-220AB
FCP Series
GS
= 10V, I
D
T
= 3.4A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
o
C)
G
D
C
C
S
= 25
= 100
o
C
1
o
C)
o
Description
The SupreMOS MOSFET, Fairchild’s next generation of high
voltage super-junction MOSFETs, employs a deep trench filling
process that differentiates it from preceding multi-epi based
technologies. By utilizing this advanced technology and precise
process control, SupreMOS provides world class Rsp, superior
switching performance and ruggedness.
This SupreMOS MOSFET fits the industry’s AC-DC SMPS
requirements for PFC, server/telecom power, FPD TV power, ATX
power, and industrial power applications.
C)
TO-220F
FCPF Series
(Note 1)
(Note 2)
(Note 3)
FCP7N60N
FCP7N60N
64.1
0.51
20.4
1.95
62.5
6.8
4.3
0.5
G
-55 to +150
79.4
600
±30
100
300
6.8
0.6
4.9
FCPF7N60NT
FCPF7N60NT
SupreMOS
30.5
0.24
20.4
6.8*
4.3*
62.5
4.1
0.5
S
D
December 2009
www.fairchildsemi.com
Units
Units
o
W/
V/ns
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FCPF7N60NT

FCPF7N60NT Summary of contents

Page 1

... Thermal Resistance, Case to Heak Sink ( Typical) θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FCP7N60N / FCPF7N60NT Rev. A Description = 3.4A The SupreMOS MOSFET, Fairchild’s next generation of high D voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies ...

Page 2

... Repetitive Rating: Pulse width limited by maximum junction temperature 2.3A 25Ω, Starting T = 25° ≤ 6.8A, di/dt ≤ 200A/µs, V ≤ 380V, Starting Essentially Independent of Operating Temperature Typical Characteristics FCP7N60N / FCPF7N60NT Rev. A Package Reel Size TO-220AB - TO-220F - unless otherwise noted C Test Conditions I ...

Page 3

... GS V 0.4 0 Drain Current [A] D Figure 5. Capacitance Characteristics 10000 1000 100 iss = shorted C oss = rss = 0 Drain-Source Voltage [V] DS FCP7N60N / FCPF7N60NT Rev. A Figure 2. Transfer Characteristics 60 10 *Notes: 1 µ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note 0.1 ...

Page 4

... Limited by R DS(on) *Notes: 0 Single Pulse 0.01 0 Drain-Source Voltage [V] DS Figure 11. Maximum Drain Current vs. Case Temperature Case Temperature C FCP7N60N / FCPF7N60NT Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0.0 -80 80 120 160 Figure 10. Maximum Safe Operating Area 100 µ ...

Page 5

... Figure 12. Transient Thermal Response Curve 3 1 0.5 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0. Figure 13. Transient Thermal Response Curve 5 0.5 1 0.2 0.1 0.05 0.02 0.1 0.01 Single pulse 0. FCP7N60N / FCPF7N60NT Rev. A (Continued Rectangular Pulse Duration [sec Rectangular Pulse Duration [sec FCP7N60N *Notes: t ...

Page 6

... FCP7N60N / FCPF7N60NT Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FCP7N60N / FCPF7N60NT Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FCP7N60N / FCPF7N60NT Rev. A TO-220AB 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions FCP7N60N / FCPF7N60NT Rev. A TO-220F 9 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FCP7N60N / FCPF7N60NT Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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