FDP038AN06A0 Fairchild Semiconductor, FDP038AN06A0 Datasheet - Page 2

• Manufacturer Part Number: FDP038AN06A0
• Description: MOSFET N-CH 60V 80A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP038AN06A0

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.8 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 6400pF @ 25V
• Power - Max: 310W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0038 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 17 A
• Power Dissipation: 310000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
2: Pulse Width = 100s
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
SD
ISS
OSS
RSS
g(TOT)
g(TH)
gs
gs2
gd
RR
Symbol
FDP038AN06A0
Device Marking
FDI038AN06A0
J
= 25°C, L = 0.255mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
FDP038AN06A0
Parameter
FDI038AN06A0
= 70A.
Device
(V
GS
= 10V)
T
C
= 25°C unless otherwise noted
TO-220AB
TO-262AB
Package
I
V
V
V
V
I
I
I
T
V
f = 1MHz
V
V
V
V
I
I
I
I
D
D
D
D
SD
SD
SD
SD
J
DS
GS
GS
GS
DS
GS
GS
DD
GS
= 250 A, V
= 80A, V
= 40A, V
= 80A, V
= 175
= 80A
= 40A
= 75A, dI
= 75A, dI
= 50V
= 0V
= 20V
= V
= 25V, V
= 0V to 10V
= 0V to 2V
= 30V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
GS
D
D
SD
SD
GS
GS
GS
= 80A
= 10V
= 6V
= 10V,
= 250 A
/dt = 100A/ s
/dt = 100A/ s
Reel Size
= 0V,
= 0V
= 2.4
T
V
I
I
D
g
Tube
Tube
C
DD
= 1.0mA
= 80A
= 150
= 30V
o
C
Tape Width
Min
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
N/A
N/A
0.0035 0.0038
0.0049 0.0074
0.0071 0.0078
6400
1123
367
144
Typ
FDP038AN06A0 / FDI038AN06A0 Rev. B2
96
12
26
15
27
17
34
60
-
-
-
-
-
-
-
-
-
-
-
1.25
Max
250
124
175
115
1.0
100
15
38
39
Quantity
1
4
-
-
-
-
-
-
-
-
-
-
-
50 units
50 units
Units
nC
nC
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A