FDP032N08 Fairchild Semiconductor, FDP032N08 Datasheet

MOSFET N-CH 75V 120A TO-220

FDP032N08

Manufacturer Part Number
FDP032N08
Description
MOSFET N-CH 75V 120A TO-220
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDP032N08

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.2 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
220nC @ 10V
Input Capacitance (ciss) @ Vds
15160pF @ 25V
Power - Max
375W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0032 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
235 A
Power Dissipation
375000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDP032N08 Rev. A3
*
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
dv/dt
P
T
T
R
R
R
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.
D
DM
FDP032N08
N-Channel PowerTrench
75V, 235A, 3.2mΩ
Features
• R
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low R
• High power and current handling capability
• RoHS compliant
J
L
DSS
GSS
AS
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
= 2.5mΩ ( Typ.)@ V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
S
GS
TO-220
= 10V, I
-
-
-
D
Continuous (T
Continuous (T
Continuous (T
= 75A
T
C
= 25
Parameter
Parameter
- Pulsed
(T
- Derate above 25
®
C
o
C unless otherwise noted*
= 25
MOSFET
o
C
C
C
C)
= 25
DS(on)
= 100
= 25
o
o
o
C, Silicon Limited)
C, Silicon Limited)
C, Package Limited)
1
o
C
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s adcanced PowerTrench process that has been espe-
cially tailored to minimize the on-state resistance and yet
maintain superior switching performance.
Application
• DC to DC convertors / Synchronous Rectification
(Note 1)
(Note 2)
(Note 3)
G
FDP032N08
-55 to +175
S
D
Ratings
1995
235*
165*
62.5
±20
120
940
375
300
5.5
2.5
0.4
0.5
75
July 2008
www.fairchildsemi.com
Units
W/
Units
o
V/ns
C/W
mJ
o
o
W
V
V
A
A
A
A
C
C
o
C
tm

Related parts for FDP032N08

FDP032N08 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP032N08 Rev. A3 ® MOSFET Description = 75A This N-Channel MOSFET is produced using Fairchild Semicon- D ductor’s adcanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance ...

Page 2

... Starting ≤ 75A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP032N08 Rev unless otherwise noted C Package Reel Size TO-220 - Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 100000 C iss = shorted) C oss = rss = C gd 10000 C iss C oss 1000 C rss 100 0 Drain-Source Voltage [V] DS FDP032N08 Rev. A3 Figure 2. Transfer Characteristics 500 100 *Notes: µ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 100 = 20V o *Note ...

Page 4

... Operation in This Area is Limited by R DS(on) 10 *Notes Drain-Source Voltage [V] DS 0.5 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 -5 10 FDP032N08 Rev. A3 (Continued) Figure 8. On-Resistance Variation vs. *Notes 10mA D 100 150 200 µ µ 100 s 1ms 10ms ...

Page 5

... FDP032N08 Rev. A3 Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) FDP032N08 Rev. A3 Peak Diode Recovery dv/dt Test Circuit & Waveforms + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT GS GS • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period controlled by pulse period ...

Page 7

... Mechanical Dimensions 9.90 (8.70) ø3.60 ±0.10 1.27 2.54TYP ±0.20 [2.54 ] 10.00 FDP032N08 Rev. A3 TO-220 ±0.20 ±0.10 ±0.10 1.52 ±0.10 0.80 2.54TYP ±0.20 [2.54 ] ±0.20 7 ±0.20 4.50 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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