PHD97NQ03LT,118 NXP Semiconductors, PHD97NQ03LT,118 Datasheet - Page 3

• Manufacturer Part Number: PHD97NQ03LT,118
• Description: MOSFET N-CH TRENCH 25V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD97NQ03LT,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 12V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Power Dissipation: 107 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061139118

NXP Semiconductors
PHD97NQ03LT_1
Product data sheet
Fig 1.
Fig 3.
(%)
I
(A)
der
I
D
120
10
10
80
40
10
0
1
3
2
10
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
50
100
150
R
DSon
003aab533
T
1
j
(°C)
= V
DS
200
Rev. 01 — 24 March 2009
/ I
D
DC
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
PHD97NQ03LT
100
V
t
100 μs
1 ms
10 ms
p
DS
= 10 μs
(V)
150
© NXP B.V. 2009. All rights reserved.
T
003aab556
mb
03aa16
(°C)
200
10
2
3 of 12