PHD97NQ03LT,118 NXP Semiconductors, PHD97NQ03LT,118 Datasheet - Page 4

• Manufacturer Part Number: PHD97NQ03LT,118
• Description: MOSFET N-CH TRENCH 25V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD97NQ03LT,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 12V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Power Dissipation: 107 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061139118

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHD97NQ03LT_1
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-5
δ = 0.5
0.2
0.1
0.05
0.02
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
single pulse
[1]
10
-4
Mounted on a printed-circuit board; vertical in still air
10
-3
Rev. 01 — 24 March 2009
Conditions
see
minimum footprint
Figure 4
10
-2
10
N-channel TrenchMOS logic level FET
-1
[1]
PHD97NQ03LT
Min
-
-
P
1
Typ
-
75
t
p
t
T
p
(s)
© NXP B.V. 2009. All rights reserved.
003aab535
δ =
Max
1.4
-
t
T
p
t
10
Unit
K/W
K/W
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