PHD97NQ03LT,118 NXP Semiconductors, PHD97NQ03LT,118 Datasheet - Page 8

• Manufacturer Part Number: PHD97NQ03LT,118
• Description: MOSFET N-CH TRENCH 25V SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHD97NQ03LT,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6.3 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 11.7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1570pF @ 12V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Power Dissipation: 107 W
• Maximum Operating Temperature: + 175 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934061139118

NXP Semiconductors
PHD97NQ03LT_1
Product data sheet
Fig 11. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
-1
1
10
V
DS
003aab542
C
C
C
(V)
iss
oss
rss
10
Rev. 01 — 24 March 2009
2
Fig 12. Source current as a function of source-drain
(A)
I
S
80
60
40
20
0
voltage; typical values
0
N-channel TrenchMOS logic level FET
0.4
PHD97NQ03LT
175 °C
0.8
T
© NXP B.V. 2009. All rights reserved.
V
j
= 25 °C
SD
003aab541
(V)
1.2
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