PSMN004-60P,127 NXP Semiconductors, PSMN004-60P,127 Datasheet
PSMN004-60P,127
Specifications of PSMN004-60P,127
PSMN004-60P
PSMN004-60P
Related parts for PSMN004-60P,127
PSMN004-60P,127 Summary of contents
Page 1
... N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2. Features Low on-state resistance Fast switching. 3. Applications High frequency computer motherboard converters OR-ing applications. ...
Page 2
... T storage temperature stg T junction temperature j Source-drain diode I source (diode forward) current (DC peak source (diode forward) current T SM Avalanche ruggedness E non-repetitive avalanche energy DS(AL)S I non-repetitive avalanche current DS(AL)S 9397 750 09156 Product data PSMN004-60P/60B N-channel enhancement mode field-effect transistor Conditions 175 Conditions ...
Page 3
... N-channel enhancement mode field-effect transistor 120 03aa16 I der (%) 100 150 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 26 April 2002 PSMN004-60P/60B 03ah79 120 150 180 T mb (º ------------------- 100 03ah81 µs 100 µ 100 (V) © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
Page 4
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09156 Product data N-channel enhancement mode field-effect transistor Conditions Figure 4 vertical in still air mounted on a printed circuit board; minimum footprint Rev. 01 — 26 April 2002 PSMN004-60P/60B Min Typ Max Unit - - 0.65 K 03af48 t p ...
Page 5
... C reverse transfer capacitance rss t turn-on delay time d(on) t rise time r t turn-off delay time d(off) t all time f Source-drain diode V source-drain (diode forward) voltage I SD 9397 750 09156 Product data PSMN004-60P/60B N-channel enhancement mode field-effect transistor Conditions I = 0. Figure ...
Page 6
... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. o3ah83 2 1 1.2 6 -60 300 ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 26 April 2002 PSMN004-60P/60B 03ah84 V DS > DSon 175 ºC 25 º (V) > DSon 0 60 120 DSon DSon 25 C © ...
Page 7
... Product data N-channel enhancement mode field-effect transistor 03aa32 ( 120 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage Rev. 01 — 26 April 2002 PSMN004-60P/60B 03aa35 min typ max ( 03ah87 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
Page 8
... Product data N-channel enhancement mode field-effect transistor 03ah86 ( º 1 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 26 April 2002 PSMN004-60P/60B 03ah88 ºC 50 100 150 Q G (nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved. 200 ...
Page 9
... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 26 April 2002 PSMN004-60P/60B base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 00-09-07 01-02-16 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...
Page 10
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 26 April 2002 PSMN004-60P/60B 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 99-06-25 01-02-12 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. SOT404 ...
Page 11
... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020426 - Product data; initial version 9397 750 09156 Product data PSMN004-60P/60B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
Page 12
... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 26 April 2002 Rev. 01 — 26 April 2002 PSMN004-60P/60B PSMN004-60P/60B Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...
Page 13
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 April 2002 Document order number: 9397 750 09156 PSMN004-60P/60B N-channel enhancement mode field-effect transistor ...