PSMN004-55W,127 NXP Semiconductors, PSMN004-55W,127 Datasheet

MOSFET N-CH 55V 100A SOT429

PSMN004-55W,127

Manufacturer Part Number
PSMN004-55W,127
Description
MOSFET N-CH 55V 100A SOT429
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN004-55W,127

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.2 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
226nC @ 5V
Input Capacitance (ciss) @ Vds
13000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055815127
PSMN004-55W
PSMN004-55W
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
• Logic level compatible
GENERAL DESCRIPTION
SiliconMAX products use the latest
Philips
achieve
on-state
package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN004-55W is supplied in
the SOT429 (TO247) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 Maximum continuous current limited by package.
October 1999
N-channel logic level TrenchMOS
SYMBOL PARAMETER
V
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
GSM
D
, T
stg
Trench
the
resistance
Drain-source voltage
Drain-gate voltage
Continuous gate-source
voltage
Peak pulsed gate-source
voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
lowest
technology
in
possible
each
to
PINNING
SYMBOL
PIN
tab
1
2
3
CONDITIONS
T
T
T
T
T
T
T
j
j
j
mb
mb
mb
mb
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C; V
= 100 ˚C; V
= 25 ˚C
= 25 ˚C
150 ˚C
gate
drain
source
drain
g
DESCRIPTION
transistor
1
GS
GS
d
s
= 5 V
= 5 V
GS
= 20 k
QUICK REFERENCE DATA
R
SOT429 (TO247)
R
R
DS(ON)
DS(ON)
DS(ON)
MIN.
- 55
V
4.2 m (V
-
-
-
-
-
-
-
-
I
4.5 m (V
5 m (V
D
DSS
Product specification
PSMN004-55W
1
= 100 A
= 55 V
2
MAX.
100
100
300
300
175
3
55
55
15
20
GS
1
1
GS
GS
= 4.5 V)
= 10 V)
Rev 1.100
= 5 V)
UNIT
W
˚C
V
V
V
V
A
A
A

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PSMN004-55W,127 Summary of contents

Page 1

... Applications:- • d.c. to d.c. converters • switched mode power supplies The PSMN004-55W is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER V Drain-source voltage ...

Page 2

... I = 100 1 5 Resistive load Measured tab to centre of die Measured from drain lead to centre of die Measured from source lead to source bond pad MHz Product specification PSMN004-55W MIN. MAX. UNIT - 357 mJ - 100 MIN. TYP. MAX. UNIT - - 0 MIN. TYP. MAX. UNIT -55˚ 1 175˚C ...

Page 3

... Continuous source current S (body diode) I Pulsed source current (body SM diode) V Diode forward voltage SD t Reverse recovery time rr Q Reverse recovery charge rr October 1999 transistor CONDITIONS -dI /dt = 100 - Product specification PSMN004-55W MIN. TYP. MAX. UNIT - - 100 300 A - 0. 150 - Rev 1.100 ...

Page 4

... Fig.6. Typical on-state resistance Product specification PSMN004-55W Transient thermal impedance, Zth j-mb (K/ 0.5 0.2 0.1 0. single pulse T 1E-05 1E-04 1E-03 1E-02 1E-01 Pulse width, tp (s) Fig.4. Transient thermal impedance. ...

Page 5

... I 100000 10000 1000 100 100 120 140 160 180 Fig.12. Typical capacitances f f Product specification PSMN004-55W Threshold Voltage, VGS(TO) (V) maximum typical minimum 100 120 140 160 180 Junction Temperature, Tj (C) Fig.10. Gate threshold voltage. = f(T ); conditions mA Drain current, ID (A) ...

Page 6

... VDD = 280 320 360 400 440 0.001 Fig.15. Maximum permissible non-repetitive avalanche current ( 0.8 0.9 1 1.1 1 Product specification PSMN004-55W Maximum Avalanche Current prior to avalanche = 150 C 0.01 0.1 1 Avalanche time, t (ms versus avalanche time (t AS unclamped inductive load Rev 1.100 ...

Page 7

... Epoxy meets UL94 V0 at 1/8". October 1999 transistor scale ( 3.7 2.2 3.2 0 4.0 5.45 1.8 2.8 0 3.6 3.3 REFERENCES IEC JEDEC EIAJ TO-247 7 Product specification PSMN004-55W SOT429 2.6 7.5 15 3.5 5.3 0.4 13 2.4 3.3 7.1 15.3 4 EUROPEAN ISSUE DATE PROJECTION 98-04-07 99-08-04 Rev 1.100 ...

Page 8

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 transistor 8 Product specification PSMN004-55W Rev 1.100 ...

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